Résumé
Three-dimensional intercalated porous graphene has been formed on Si(111)
by electron beam evaporation under appropriate conditions and its structural
and electronic properties investigated in detail by reflection high-energy
electron diffraction, x-ray photoemission spectroscopy, Raman spectroscopy,
high-resolution scanning electron microscopy, atomic force microscopy, and
scanning tunneling microscopy. The results show that the crystalline quality
of the porous graphene depended not only on the substrate temperature but
also on the SiC layer thickness during carbon atom deposition.
by electron beam evaporation under appropriate conditions and its structural
and electronic properties investigated in detail by reflection high-energy
electron diffraction, x-ray photoemission spectroscopy, Raman spectroscopy,
high-resolution scanning electron microscopy, atomic force microscopy, and
scanning tunneling microscopy. The results show that the crystalline quality
of the porous graphene depended not only on the substrate temperature but
also on the SiC layer thickness during carbon atom deposition.
langue originale | Anglais |
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Pages (de - à) | 1575-1582 |
Nombre de pages | 8 |
journal | Journal of Electronic Materials |
Volume | 47 |
Numéro de publication | 2 |
Les DOIs | |
Etat de la publication | Publié - 19 nov. 2017 |
Empreinte digitale
Examiner les sujets de recherche de « Three-Dimensional Intercalated Porous Graphene on Si(111) ». Ensemble, ils forment une empreinte digitale unique.Équipement
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Microscopie à effet tunnel
Sporken, R. (!!Manager)
Plateforme technologique Morphologie, imagerieEquipement/installations: Equipement
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Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)
Louette, P. (!!Manager), Colaux, J. (!!Manager), Felten, A. (!!Manager), Tabarrant, T. (!!Operator), COME, F. (!!Operator) & Debarsy, P.-L. (!!Manager)
Plateforme technologique Synthese, irradiation et analyse des materiauxEquipement/installations: Plateforme technolgique