Thin film depth profiling by ion beam analysis

Chris Jeynes, Julien L. Colaux

Résultats de recherche: Contribution à un journal/une revueArticle de revue

Résumé

The analysis of thin films is of central importance for functional materials, including the very large and active field of nanomaterials. Quantitative elemental depth profiling is basic to analysis, and many techniques exist, but all have limitations and quantitation is always an issue. We here review recent significant advances in ion beam analysis (IBA) which now merit it a standard place in the analyst's toolbox. Rutherford backscattering spectrometry (RBS) has been in use for half a century to obtain elemental depth profiles non-destructively from the first fraction of a micron from the surface of materials: more generally, "IBA" refers to the cluster of methods including elastic scattering (RBS; elastic recoil detection, ERD; and non-Rutherford elastic backscattering, EBS), nuclear reaction analysis (NRA: including particle-induced gamma-ray emission, PIGE), and also particle-induced X-ray emission (PIXE). We have at last demonstrated what was long promised, that RBS can be used as a primary reference technique for the best traceable accuracy available for non-destructive model-free methods in thin films. Also, it has become clear over the last decade that we can effectively combine synergistically the quite different information available from the atomic (PIXE) and nuclear (RBS, EBS, ERD, NRA) methods. Although it is well known that RBS has severe limitations that curtail its usefulness for elemental depth profiling, these limitations are largely overcome when we make proper synergistic use of IBA methods. In this Tutorial Review we aim to briefly explain to analysts what IBA is and why it is now a general quantitative method of great power. Analysts have got used to the availability of the large synchrotron facilities for certain sorts of difficult problems, but there are many much more easily accessible mid-range IBA facilities also able to address (and often more quantitatively) a wide range of otherwise almost intractable thin film questions.

langue originaleAnglais
Pages (de - à)5944-5985
Nombre de pages42
journalAnalyst
Volume141
Numéro de publication21
Les DOIs
étatPublié - 7 nov. 2016

Empreinte digitale

Depth profiling
Rutherford backscattering spectroscopy
Spectrometry
Ion beams
Spectrum Analysis
Ions
Thin films
ion
spectrometry
Gamma Rays
X rays
Synchrotrons
Functional materials
Elastic scattering
Nuclear reactions
Nanostructures
Backscattering
Nanostructured materials
Gamma rays
X-Rays

Citer ceci

Jeynes, Chris ; Colaux, Julien L. / Thin film depth profiling by ion beam analysis. Dans: Analyst. 2016 ; Vol 141, Numéro 21. p. 5944-5985.
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Thin film depth profiling by ion beam analysis. / Jeynes, Chris; Colaux, Julien L.

Dans: Analyst, Vol 141, Numéro 21, 07.11.2016, p. 5944-5985.

Résultats de recherche: Contribution à un journal/une revueArticle de revue

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