Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties

Claude Niebel; Yeongin Kim; Christian Ruzié; Jolanta Karpinska; Basab Chattopadhyay; Guillaume Schweicher; Audrey Richard; Vincent Lemaur; Yoann Olivier; Jérôme Cornil; Alan R. Kennedy; Ying Diao; Wen Ya Lee; Stefan Mannsfeld; Zhenan Bao; Yves H. Geerts

doi:10.1039/c4tc02158d

Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties

Claude Niebel, Yeongin Kim, Christian Ruzié, Jolanta Karpinska, Basab Chattopadhyay, Guillaume Schweicher, Audrey Richard, Vincent Lemaur, Yoann Olivier, Jérôme Cornil, Alan R. Kennedy, Ying Diao, Wen Ya Lee, Stefan Mannsfeld, Zhenan Bao, Yves H. Geerts

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm² V^-1 s^-1.

langue originale	Anglais
Pages (de - à)	674-685
Nombre de pages	12
journal	Journal of Materials Chemistry C
Volume	3
Numéro de publication	3
Les DOIs	https://doi.org/10.1039/c4tc02158d
Etat de la publication	Publié - 21 janv. 2015
Modification externe	Oui

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10.1039/c4tc02158d

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Niebel, C., Kim, Y., Ruzié, C., Karpinska, J., Chattopadhyay, B., Schweicher, G., Richard, A., Lemaur, V., Olivier, Y., Cornil, J., Kennedy, A. R., Diao, Y., Lee, W. Y., Mannsfeld, S., Bao, Z., & Geerts, Y. H. (2015). Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties. Journal of Materials Chemistry C, 3(3), 674-685. https://doi.org/10.1039/c4tc02158d

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title = "Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties",

abstract = "Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.",

author = "Claude Niebel and Yeongin Kim and Christian Ruzi{\'e} and Jolanta Karpinska and Basab Chattopadhyay and Guillaume Schweicher and Audrey Richard and Vincent Lemaur and Yoann Olivier and J{\'e}r{\^o}me Cornil and Kennedy, {Alan R.} and Ying Diao and Lee, {Wen Ya} and Stefan Mannsfeld and Zhenan Bao and Geerts, {Yves H.}",

year = "2015",

month = jan,

day = "21",

doi = "10.1039/c4tc02158d",

language = "English",

volume = "3",

pages = "674--685",

journal = "Journal of Materials Chemistry C",

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publisher = "Royal Society of Chemistry",

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Niebel, C, Kim, Y, Ruzié, C, Karpinska, J, Chattopadhyay, B, Schweicher, G, Richard, A, Lemaur, V, Olivier, Y, Cornil, J, Kennedy, AR, Diao, Y, Lee, WY, Mannsfeld, S, Bao, Z & Geerts, YH 2015, 'Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties', Journal of Materials Chemistry C, VOL. 3, Numéro 3, p. 674-685. https://doi.org/10.1039/c4tc02158d

TY - JOUR

T1 - Thienoacene dimers based on the thieno[3,2-b]thiophene moiety

T2 - Synthesis, characterization and electronic properties

AU - Niebel, Claude

AU - Kim, Yeongin

AU - Ruzié, Christian

AU - Karpinska, Jolanta

AU - Chattopadhyay, Basab

AU - Schweicher, Guillaume

AU - Richard, Audrey

AU - Lemaur, Vincent

AU - Olivier, Yoann

AU - Cornil, Jérôme

AU - Kennedy, Alan R.

AU - Diao, Ying

AU - Lee, Wen Ya

AU - Mannsfeld, Stefan

AU - Bao, Zhenan

AU - Geerts, Yves H.

PY - 2015/1/21

Y1 - 2015/1/21

N2 - Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

AB - Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

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U2 - 10.1039/c4tc02158d

DO - 10.1039/c4tc02158d

M3 - Article

AN - SCOPUS:84919626159

SN - 2050-7534

VL - 3

SP - 674

EP - 685

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 3

ER -

Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: Synthesis, characterization and electronic properties

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