TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak; A. ŁAszcz; A. Czerwinski; J. Katcki; X. Tang; N. Reckinger; D.A. Yarekha; G. Larrieu; E. Dubois

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

J. Ratajczak, A. ŁAszcz, A. Czerwinski, J. Katcki, X. Tang, N. Reckinger, D.A. Yarekha, G. Larrieu, E. Dubois

Résultats de recherche: Contribution à un journal/une revue › Résumé d'une communication scientifique › Revue par des pairs

Résumé

The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

langue originale	Anglais
journal	Acta physica Polonica. A
Volume	116
Numéro de publication	SUPPL.
Etat de la publication	Publié - 1 janv. 2009

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@article{6d5a91bd596e47e6a40f3410d3f269e6,

title = "TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs",

abstract = "The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.",

author = "J. Ratajczak and A. {\L}Aszcz and A. Czerwinski and J. Katcki and X. Tang and N. Reckinger and D.A. Yarekha and G. Larrieu and E. Dubois",

year = "2009",

month = jan,

day = "1",

language = "English",

volume = "116",

journal = "Acta physica Polonica. A",

issn = "0587-4246",

publisher = "Polish Academy of Sciences",

number = "SUPPL.",

}

TY - JOUR

T1 - TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

AU - Ratajczak, J.

AU - ŁAszcz, A.

AU - Czerwinski, A.

AU - Katcki, J.

AU - Tang, X.

AU - Reckinger, N.

AU - Yarekha, D.A.

AU - Larrieu, G.

AU - Dubois, E.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

AB - The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.

UR - http://www.scopus.com/inward/record.url?scp=74849118211&partnerID=8YFLogxK

M3 - Meeting abstract

AN - SCOPUS:74849118211

SN - 0587-4246

VL - 116

JO - Acta physica Polonica. A

JF - Acta physica Polonica. A

IS - SUPPL.

ER -

TEM characterization of polysilicon and silicide fin fabrication processes of FinFETs

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