Strain relaxation in high Ge content SiGe layers deposited on Si

Giovanni Capellini; Monica De Seta; Yan Busby; Marialilia Pea; Florestano Evangelisti; Giovanni  Nicotra; Corrado Spinella; Michele Nardone; Claudio Ferrari

doi:10.1063/1.3327435

Strain relaxation in high Ge content SiGe layers deposited on Si

Giovanni Capellini, Monica De Seta, Yan Busby, Marialilia Pea, Florestano Evangelisti, Giovanni Nicotra, Corrado Spinella, Michele Nardone, Claudio Ferrari

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

langue originale	Anglais
journal	Journal of Applied Physics
Volume	107
Numéro de publication	6
Les DOIs	https://doi.org/10.1063/1.3327435
Etat de la publication	Publié - 15 mars 2010
Modification externe	Oui

Accès au document

10.1063/1.3327435

Contient cette citation

@article{9ff40bb37d64464884b323362189d663,

title = "Strain relaxation in high Ge content SiGe layers deposited on Si",

author = "Giovanni Capellini and {De Seta}, Monica and Yan Busby and Marialilia Pea and Florestano Evangelisti and Giovanni Nicotra and Corrado Spinella and Michele Nardone and Claudio Ferrari",

year = "2010",

month = mar,

day = "15",

doi = "10.1063/1.3327435",

language = "English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Strain relaxation in high Ge content SiGe layers deposited on Si

AU - Capellini, Giovanni

AU - De Seta, Monica

AU - Busby, Yan

AU - Pea, Marialilia

AU - Evangelisti, Florestano

AU - Nicotra, Giovanni

AU - Spinella, Corrado

AU - Nardone, Michele

AU - Ferrari, Claudio

PY - 2010/3/15

Y1 - 2010/3/15

U2 - 10.1063/1.3327435

DO - 10.1063/1.3327435

M3 - Article

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -