In this paper, we review the pivotal role that defects (in particular vacancy structures) play in driving the H-induced exfoliation of Si. We highlight the central role that infrared spectroscopy has played in delineating the microscopic details of the exfoliation process. We show that when the results of such spectroscopic studies are combined with those obtained using a variety of other experimental probes as well as ab initio quantum chemical cluster calculations, an unambiguous mechanistic picture emerges. Specifically we find that H-terminated vacancy structures drive the formation of internal surfaces into cracks where H2 is then evolved, resulting in the build-up of sufficient internal pressure to cause lift-off of the overlying Si. The role of co-implantation of He is also discussed.
|Pages (de - à)||152-163|
|Nombre de pages||12|
|Etat de la publication||Publié - 1999|