Nuclear reactions (d,p) are often used to perform depth profiling of light elements in solids. In particular, protons coming from 12C(d,p0)13C and 13C(d,p0)14C reactions are emitted at very different energies. Consequently these two reactions can be used to depth profile 12C and 13C simultaneously. Nevertheless the cross-section of 13C(d,p0)14C reaction is 10 times smaller than the 12C(d,p0)13C one. So, the geometry of detection must be judiciously chosen in order to depth profile these two elements with a high sensitivity and good resolution. In the framework of this study we have performed 400 keV 13C ions implantation into polished copper substrates at different temperatures and implanted doses with a 2 MV Tandem accelerator. Using the reactions described above, we have studied the evolution of 13C depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.
|Pages (de - à)||429-433|
|Nombre de pages||5|
|journal||Nuclear instruments and methods in physics research B|
|Numéro de publication||1-2|
|Etat de la publication||Publié - oct. 2005|
Plateforme technologique Synthese, irradiation et analyse des materiaux
Equipement/installations: Plateforme technolgique