Simultaneous depth profiling of the ¹²C and ¹³C elements in different samples using (d,p) reactions

Nuclear reactions (d,p) are often used to perform depth profiling of light elements in solids. In particular, protons coming from ¹²C(d,p₀)¹³C and ¹³C(d,p₀)¹⁴C reactions are emitted at very different energies. Consequently these two reactions can be used to depth profile ¹²C and ¹³C simultaneously. Nevertheless the cross-section of ¹³C(d,p₀)¹⁴C reaction is 10 times smaller than the ¹²C(d,p₀)¹³C one. So, the geometry of detection must be judiciously chosen in order to depth profile these two elements with a high sensitivity and good resolution. In the framework of this study we have performed 400 keV ¹³C ions implantation into polished copper substrates at different temperatures and implanted doses with a 2 MV Tandem accelerator. Using the reactions described above, we have studied the evolution of 13C depth profile as a function of implanted doses and temperature. We have also determined the origin of surface contamination that appears during the implantation process.