Selective growth of CdTe on patterned CdTeSi (211)

T. Seldrum, R. Bommena, L. Samain, J. Dumont, S. Sivananthan, R. Sporken

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTeAsSi (211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or Si O2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticking on bare Si areas if the temperature is sufficiently high. Based on the analysis of the temperature dependence of the growth rate of CdTe, we suggest that different physisorption energies on Si and CdTe are the main cause of this selective growth.

langue originaleAnglais
Pages (de - à)1105-1109
Nombre de pages5
journalJournal of vacuum science and technology B
Volume26
Numéro de publication3
Les DOIs
étatPublié - 2008

Empreinte digitale

Molecular beam epitaxy
Cadmium telluride
Physisorption
molecular beam epitaxy
Photoemission
Photolithography
cadmium tellurides
Microscopic examination
Temperature
photoelectric emission
lithography
Substrates
microscopy
temperature dependence
causes
temperature
energy

Citer ceci

Seldrum, T. ; Bommena, R. ; Samain, L. ; Dumont, J. ; Sivananthan, S. ; Sporken, R. / Selective growth of CdTe on patterned CdTeSi (211). Dans: Journal of vacuum science and technology B. 2008 ; Vol 26, Numéro 3. p. 1105-1109.
@article{2d81fabecd95443297dd611424b880fa,
title = "Selective growth of CdTe on patterned CdTeSi (211)",
abstract = "The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTeAsSi (211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or Si O2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticking on bare Si areas if the temperature is sufficiently high. Based on the analysis of the temperature dependence of the growth rate of CdTe, we suggest that different physisorption energies on Si and CdTe are the main cause of this selective growth.",
author = "T. Seldrum and R. Bommena and L. Samain and J. Dumont and S. Sivananthan and R. Sporken",
year = "2008",
doi = "10.1116/1.2912090",
language = "English",
volume = "26",
pages = "1105--1109",
journal = "Journal of vacuum science and technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

Selective growth of CdTe on patterned CdTeSi (211). / Seldrum, T.; Bommena, R.; Samain, L.; Dumont, J.; Sivananthan, S.; Sporken, R.

Dans: Journal of vacuum science and technology B, Vol 26, Numéro 3, 2008, p. 1105-1109.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Selective growth of CdTe on patterned CdTeSi (211)

AU - Seldrum, T.

AU - Bommena, R.

AU - Samain, L.

AU - Dumont, J.

AU - Sivananthan, S.

AU - Sporken, R.

PY - 2008

Y1 - 2008

N2 - The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTeAsSi (211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or Si O2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticking on bare Si areas if the temperature is sufficiently high. Based on the analysis of the temperature dependence of the growth rate of CdTe, we suggest that different physisorption energies on Si and CdTe are the main cause of this selective growth.

AB - The authors have studied selective growth of cadmium telluride on Si(211) by molecular beam epitaxy (MBE). Patterned substrates were produced by optical lithography of MBE-grown CdTeAsSi (211). Photoemission microscopy was used as the main tool to study selective growth. This is very powerful because Si or Si O2 can be very easily distinguished from areas covered with even small amounts of CdTe due to contrast from work function differences. It was found that CdTe grows on CdTe without sticking on bare Si areas if the temperature is sufficiently high. Based on the analysis of the temperature dependence of the growth rate of CdTe, we suggest that different physisorption energies on Si and CdTe are the main cause of this selective growth.

UR - http://www.scopus.com/inward/record.url?scp=44649151638&partnerID=8YFLogxK

U2 - 10.1116/1.2912090

DO - 10.1116/1.2912090

M3 - Article

VL - 26

SP - 1105

EP - 1109

JO - Journal of vacuum science and technology B

JF - Journal of vacuum science and technology B

SN - 1071-1023

IS - 3

ER -