Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

N. Reckinger, X. Tang, V. Bayot, D.A. Yarekha, E. Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.-P. Raskin

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    Résumé

    The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
    langue originaleAnglais
    journalApplied Physics Letters
    Volume94
    Numéro de publication19
    Les DOIs
    Etat de la publicationPublié - 1 janv. 2009

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