Résumé
The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 °C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.
langue originale | Anglais |
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journal | Applied Physics Letters |
Volume | 94 |
Numéro de publication | 19 |
Les DOIs | |
Etat de la publication | Publié - 1 janv. 2009 |