Resistive switching based on filaments in metal/PMMA/metal thin film devices

Christoph Wolf, Sebastian Nau, Stefan Sax, Yan Busby, Jean-Jacques Pireaux, Emil J W List-Kratochvil

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

langue originaleAnglais
Numéro d'article120301
journalJapanese Journal of Applied Physics
Volume54
Numéro de publication12
Les DOIs
étatPublié - 1 déc. 2015

Empreinte digitale

Thin film devices
filaments
thin films
Metals
metals
Fabrication
fabrication
Secondary ion mass spectrometry
Polymethyl methacrylates
polymethyl methacrylate
secondary ion mass spectrometry
humidity
implantation
Atmospheric humidity
switches
Switches
Imaging techniques
Oxygen
oxygen

Citer ceci

Wolf, Christoph ; Nau, Sebastian ; Sax, Stefan ; Busby, Yan ; Pireaux, Jean-Jacques ; List-Kratochvil, Emil J W. / Resistive switching based on filaments in metal/PMMA/metal thin film devices. Dans: Japanese Journal of Applied Physics. 2015 ; Vol 54, Numéro 12.
@article{4ae482b8b42d47df9b932a30ed83b7d1,
title = "Resistive switching based on filaments in metal/PMMA/metal thin film devices",
abstract = "The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.",
author = "Christoph Wolf and Sebastian Nau and Stefan Sax and Yan Busby and Jean-Jacques Pireaux and List-Kratochvil, {Emil J W}",
year = "2015",
month = "12",
day = "1",
doi = "10.7567/JJAP.54.120301",
language = "English",
volume = "54",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "12",

}

Resistive switching based on filaments in metal/PMMA/metal thin film devices. / Wolf, Christoph; Nau, Sebastian; Sax, Stefan; Busby, Yan; Pireaux, Jean-Jacques; List-Kratochvil, Emil J W.

Dans: Japanese Journal of Applied Physics, Vol 54, Numéro 12, 120301, 01.12.2015.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Resistive switching based on filaments in metal/PMMA/metal thin film devices

AU - Wolf, Christoph

AU - Nau, Sebastian

AU - Sax, Stefan

AU - Busby, Yan

AU - Pireaux, Jean-Jacques

AU - List-Kratochvil, Emil J W

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

AB - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

UR - http://www.scopus.com/inward/record.url?scp=84948708211&partnerID=8YFLogxK

U2 - 10.7567/JJAP.54.120301

DO - 10.7567/JJAP.54.120301

M3 - Article

VL - 54

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 12

M1 - 120301

ER -