Resistive switching based on filaments in metal/PMMA/metal thin film devices

Christoph Wolf; Sebastian Nau; Stefan Sax; Yan Busby; Jean-Jacques Pireaux; Emil J W List-Kratochvil

doi:10.7567/JJAP.54.120301

Resistive switching based on filaments in metal/PMMA/metal thin film devices

Christoph Wolf, Sebastian Nau, Stefan Sax, Yan Busby, Jean-Jacques Pireaux, Emil J W List-Kratochvil

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

langue originale	Anglais
Numéro d'article	120301
journal	Japanese Journal of Applied Physics
Volume	54
Numéro de publication	12
Les DOIs	https://doi.org/10.7567/JJAP.54.120301
Etat de la publication	Publié - 1 déc. 2015

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10.7567/JJAP.54.120301

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Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)
Pierre Louette (!!Manager), Julien Colaux (!!Manager), Alexandre Felten (!!Manager), Tijani Tabarrant (!!Operator), Frederic COME (!!Operator) & Paul-Louis Debarsy (!!Manager)
Plateforme technologique Synthese, irradiation et analyse des materiaux
Equipement/installations: Plateforme technolgique

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abstract = "The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.",

author = "Christoph Wolf and Sebastian Nau and Stefan Sax and Yan Busby and Jean-Jacques Pireaux and List-Kratochvil, {Emil J W}",

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AU - Wolf, Christoph

AU - Nau, Sebastian

AU - Sax, Stefan

AU - Busby, Yan

AU - Pireaux, Jean-Jacques

AU - List-Kratochvil, Emil J W

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

AB - The working mechanism of unipolar organic resistive switching thin-film devices is investigated. On the basis of a metal/poly(methyl methacrylate)/ metal model system, direct spectroscopic evidence for filament formation is obtained by three-dimensional (3D) imaging with time-of-flight secondary ion mass spectrometry. By means of alternative fabrication methods the claimed influence of metal implantation in the organic layer during fabrication is ruled out. Further, the stability of the resistive switches under oxygen and humidity is investigated leading to a deeper understanding of the processes governing the formation and rupture of filaments.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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M1 - 120301

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Resistive switching based on filaments in metal/PMMA/metal thin film devices

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