RbF/Ge(111) interface formation studied by LEED, XPS and UPS

Frédéric Wiame, Li Ming Luo Yu, Robert Sporken, Paul Thiry, Roland Caudano, Véronique LANGLAIS, Hafid BELKHIR, Jean-Marie DEBEVER

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    The interface formation between rubidium fluoride (RbF) and the Ge(111)c(2×8) surface has been studied by low-energy electron diffraction, x-ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy as a function of growth temperature. Three interface types have been identified. Sublimation of RbF at 750 K leads to a (3×1) symmetry with three domains induced by a chemisorbed submonolayer of Rb. An epitaxial RbF overlayer is observed at 500 K with rubidium bound to the substrate (F-Rb-Ge). Island growth mode is observed at room temperature. A disordered layer of RbF is then formed, with two types of interfacial bonding: Rb-F-Ge and F-Rb-Ge. The stability of the RbF film under the irradiation of various beams is also discussed.
    langue originaleAnglais
    Pages (de - à)4480-4483
    Nombre de pages4
    journalPhysical review. B, Condensed matter
    Numéro de publication7
    Les DOIs
    Etat de la publicationPublié - 1996

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