TY - JOUR
T1 - Process optimization and downscaling of a single-electron single dot memory
AU - Krzeminski, C.
AU - Tang, X.
AU - Reckinger, N.
AU - Bayot, V.
AU - Dubois, E.
PY - 2009/11/1
Y1 - 2009/11/1
N2 - This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation. Based on the process modeling, the influence of various parameters (oxidation temperature, nanowire shape) has been investigated. The necessity of a sharp compromise between these different parameters to ensure the presence of the memory dot has been established. In order to propose an aggressive memory cell, the downscaling of the device has been ca efully studied. Scaling rules show that the size of the original device could be reduced by a factor of 2. This point has been previously confirmed by the realization of single-electron memory devices.
AB - This paper presents the process optimization of a single-electron nanoflash electron memory. Self-aligned single dot memory structures have been fabricated using a wet anisotropic oxidation of a silicon nanowire. One of the main issue was to clarify the process conditions for the dot formation. Based on the process modeling, the influence of various parameters (oxidation temperature, nanowire shape) has been investigated. The necessity of a sharp compromise between these different parameters to ensure the presence of the memory dot has been established. In order to propose an aggressive memory cell, the downscaling of the device has been ca efully studied. Scaling rules show that the size of the original device could be reduced by a factor of 2. This point has been previously confirmed by the realization of single-electron memory devices.
UR - http://www.scopus.com/inward/record.url?scp=70749112429&partnerID=8YFLogxK
U2 - 10.1109/TNANO.2009.2021653
DO - 10.1109/TNANO.2009.2021653
M3 - Article
AN - SCOPUS:70749112429
SN - 1536-125X
VL - 8
SP - 737
EP - 748
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 6
ER -