Process for forming a film on a substrate by reactive sputtering.

Rene Winand; Stéphane Lucas; Pierre Vanden Brande; Alain Weymeersch; Lucien Renard

Process for forming a film on a substrate by reactive sputtering.

Titre traduit de la contribution: Procédé pour la formation d'un revêtement sur un substrat par pulvérisation cathodique réactive.

Rene Winand (Inventeur), Stéphane Lucas (Inventeur), Pierre Vanden Brande (Inventeur), Alain Weymeersch (Inventeur), Lucien Renard (Inventeur)

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Résumé

Procédé pour la formation d'un revêtement (5) sur un substrat (3) par pulvérisation cathodique réactive ("sputtering") dans une enceinte fermée (1) en présence d'un plasma d'un gaz non réactif et d'un gaz réactif contenant le ou les éléments dont doit être formé le revêtement susdit, suivant lequel on fait usage d'une cible (2) présentant une couche superficielle (4) orientée vers le substrat et contenant au moins un des éléments à déposer sur ce dernier par pulvérisation cathodique, suivant lequel l'on contrôle l'épaisseur de cette couche superficielle (4) au cours de la pulvérisation cathodique par un réglage de la concentration des gaz dans l'enceinte fermée susdite (1).

Titre traduit de la contribution	Procédé pour la formation d'un revêtement sur un substrat par pulvérisation cathodique réactive.
langue originale	Anglais
Numéro de brevet	EP0620290
CIB	H01L 21/ 203 A I
Date de priorité	16/04/93
Etat de la publication	Publié - 19 oct. 1994

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EP-620290
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title = "Process for forming a film on a substrate by reactive sputtering.",

abstract = "Process for forming a coating (5) on a substrate (3) by reactive cathode sputtering in a closed vessel (1) in the presence of a plasma of an unreactive gas and of a reactive gas containing the element(s) from which the abovementioned coating is to be formed, according to which use is made of a target (2) which has a surface layer (4) directed towards the substrate and containing at least one of the elements to be deposited on the latter by cathode sputtering, according to which the thickness of this surface layer (4) is controlled during the cathode sputtering by adjusting the concentration of the gases in the abovementioned closed vessel (1).",

author = "Rene Winand and St{\'e}phane Lucas and {Vanden Brande}, Pierre and Alain Weymeersch and Lucien Renard",

year = "1994",

month = oct,

day = "19",

language = "English",

type = "Patent",

note = "EP0620290; H01L 21/ 203 A I",

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T1 - Process for forming a film on a substrate by reactive sputtering.

AU - Winand, Rene

AU - Lucas, Stéphane

AU - Vanden Brande, Pierre

AU - Weymeersch, Alain

AU - Renard, Lucien

PY - 1994/10/19

Y1 - 1994/10/19

N2 - Process for forming a coating (5) on a substrate (3) by reactive cathode sputtering in a closed vessel (1) in the presence of a plasma of an unreactive gas and of a reactive gas containing the element(s) from which the abovementioned coating is to be formed, according to which use is made of a target (2) which has a surface layer (4) directed towards the substrate and containing at least one of the elements to be deposited on the latter by cathode sputtering, according to which the thickness of this surface layer (4) is controlled during the cathode sputtering by adjusting the concentration of the gases in the abovementioned closed vessel (1).

AB - Process for forming a coating (5) on a substrate (3) by reactive cathode sputtering in a closed vessel (1) in the presence of a plasma of an unreactive gas and of a reactive gas containing the element(s) from which the abovementioned coating is to be formed, according to which use is made of a target (2) which has a surface layer (4) directed towards the substrate and containing at least one of the elements to be deposited on the latter by cathode sputtering, according to which the thickness of this surface layer (4) is controlled during the cathode sputtering by adjusting the concentration of the gases in the abovementioned closed vessel (1).

M3 - Patent

M1 - EP0620290

ER -

Process for forming a film on a substrate by reactive sputtering.

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