Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

H. Bender; Th. Conard; O. Richard; B. Brijs; J. Pétry; W. Vandervorst; Chr. Defranoux; P. Boher; N. Rochat; C. Wyon; P. Mack; J. Wolstenholme; R. Vitchev; L. Houssiau; J.-J. Pireaux; A. Bergmaier; G. Dollinger

Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques

H. Bender, Th. Conard, O. Richard, B. Brijs, J. Pétry, W. Vandervorst, Chr. Defranoux, P. Boher, N. Rochat, C. Wyon, P. Mack, J. Wolstenholme, R. Vitchev, L. Houssiau, J.-J. Pireaux, A. Bergmaier, G. Dollinger

Namur Research Institute for Life Sciences

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

The physical properties of HfO₂ layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

langue originale	Anglais
Pages (de - à)	223-232
Nombre de pages	10
journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5133
Etat de la publication	Publié - 1 janv. 2003

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Bender, H., Conard, T., Richard, O., Brijs, B., Pétry, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, C., Mack, P., Wolstenholme, J., Vitchev, R., Houssiau, L., Pireaux, J.-J., Bergmaier, A., & Dollinger, G. (2003). Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques. Proceedings of SPIE - The International Society for Optical Engineering, 5133, 223-232.

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title = "Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques",

abstract = "The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.",

author = "H. Bender and Th. Conard and O. Richard and B. Brijs and J. P{\'e}try and W. Vandervorst and Chr. Defranoux and P. Boher and N. Rochat and C. Wyon and P. Mack and J. Wolstenholme and R. Vitchev and L. Houssiau and J.-J. Pireaux and A. Bergmaier and G. Dollinger",

year = "2003",

month = jan,

day = "1",

language = "English",

volume = "5133",

pages = "223--232",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

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Bender, H, Conard, T, Richard, O, Brijs, B, Pétry, J, Vandervorst, W, Defranoux, C, Boher, P, Rochat, N, Wyon, C, Mack, P, Wolstenholme, J, Vitchev, R, Houssiau, L , Pireaux, J-J, Bergmaier, A & Dollinger, G 2003, 'Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques', Proceedings of SPIE - The International Society for Optical Engineering, VOL. 5133, p. 223-232.

TY - JOUR

T1 - Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

AU - Bender, H.

AU - Conard, Th.

AU - Richard, O.

AU - Brijs, B.

AU - Pétry, J.

AU - Vandervorst, W.

AU - Defranoux, Chr.

AU - Boher, P.

AU - Rochat, N.

AU - Wyon, C.

AU - Mack, P.

AU - Wolstenholme, J.

AU - Vitchev, R.

AU - Houssiau, L.

AU - Pireaux, J.-J.

AU - Bergmaier, A.

AU - Dollinger, G.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

AB - The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

UR - http://www.scopus.com/inward/record.url?scp=0242468973&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242468973

SN - 0277-786X

VL - 5133

SP - 223

EP - 232

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

Résumé

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Contient cette citation

Physical characterization of thin HfO₂ layers by the combined analysis with complementary techniques