The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.
|Pages (de - à)||223-232|
|Nombre de pages||10|
|journal||Proceedings of SPIE - The International Society for Optical Engineering|
|Etat de la publication||Publié - 1 janv. 2003|