Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

H. Bender, Th. Conard, O. Richard, B. Brijs, J. Pétry, W. Vandervorst, Chr. Defranoux, P. Boher, N. Rochat, C. Wyon, P. Mack, J. Wolstenholme, R. Vitchev, L. Houssiau, J.-J. Pireaux, A. Bergmaier, G. Dollinger

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Résumé

The physical properties of HfO2 layers prepared by atomic layer and metal organic chemical vapor deposition (MOCVD) were analyzed. A combination of different complementary analysis techniques was used during the analysis. A similar deposition time dependence was found for the MOCVD layers deposited at 300 and 485° C. It was shown that the density increases with the number of deposition cycles for the atomic layer deposition (ALD) layers.

langue originaleAnglais
Pages (de - à)223-232
Nombre de pages10
journalProceedings of SPIE - The International Society for Optical Engineering
Volume5133
Etat de la publicationPublié - 1 janv. 2003

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  • Contient cette citation

    Bender, H., Conard, T., Richard, O., Brijs, B., Pétry, J., Vandervorst, W., Defranoux, C., Boher, P., Rochat, N., Wyon, C., Mack, P., Wolstenholme, J., Vitchev, R., Houssiau, L., Pireaux, J-J., Bergmaier, A., & Dollinger, G. (2003). Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques. Proceedings of SPIE - The International Society for Optical Engineering, 5133, 223-232.