Manganese thin films have been deposited on GeS (001) cleaved surface. The growth mode, chemical states and Mn 3d density of state (DOS) have been investigated by X -ray (XPS) and synchrotron radiation photoelectron spectroscopy. Out of these measurements we propose a film model where Mn clusters nucleate on a three-monolayer thick MnS2 + Ge interface. Mn 3d DOS and satellite structure of Mn core levels indicate that p-d hybridization is weaker at the Mn/GeS interface than in bulk compound where manganese is covalently bonded.
|Pages (de - à)||172-182|
|Nombre de pages||11|
|Numéro de publication||1-2|
|Etat de la publication||Publié - 2002|