Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies

Mac Mugumaoderha Cubaka; Robert Sporken; Jacques Ghijsen; Frank M.F. de Groot; Jacques Dumont

doi:10.1021/jp206705p

Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies

Mac Mugumaoderha Cubaka, Robert Sporken, Jacques Ghijsen, Frank M.F. de Groot, Jacques Dumont

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn _yMn _3-yO ₄ starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.

langue originale	Anglais
Pages (de - à)	665-670
Nombre de pages	6
journal	Journal of Physical Chemistry C: Nanomaterials and interfaces
Volume	116
Numéro de publication	1
Les DOIs	https://doi.org/10.1021/jp206705p https://doi.org/10.1021/jp206705p
Etat de la publication	Publié - 12 janv. 2012

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@article{530e8e3be92f403fb6aa6ab816a486d9,

title = "Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies",

abstract = "Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (000{\=1}) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.",

author = "{Mugumaoderha Cubaka}, Mac and Robert Sporken and Jacques Ghijsen and {de Groot}, {Frank M.F.} and Jacques Dumont",

year = "2012",

month = jan,

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doi = "10.1021/jp206705p",

language = "English",

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journal = "Journal of Physical Chemistry C: Nanomaterials and interfaces",

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publisher = "American Chemical Society",

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}

Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies. / Mugumaoderha Cubaka, Mac; Sporken, Robert ; Ghijsen, Jacques et al.
Dans: Journal of Physical Chemistry C: Nanomaterials and interfaces, Vol 116, Numéro 1, 12.01.2012, p. 665-670.

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

TY - JOUR

T1 - Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies

AU - Mugumaoderha Cubaka, Mac

AU - Sporken, Robert

AU - Ghijsen, Jacques

AU - de Groot, Frank M.F.

AU - Dumont, Jacques

PY - 2012/1/12

Y1 - 2012/1/12

N2 - Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.

AB - Phase transitions occurring at the Mn/ZnO interface upon annealing are probed in situ by high-energy X-ray: photoelectron and absorption spectroscopies. A thin Mn film (∼1 nm) is grown on the (0001̄) surface of a ZnO single crystal. Upon annealing to progressively higher temperature ranging from 575 to 800 K, various Mn phases form successively. At first, the Mn film oxidizes and a MnO layer forms on top of the surface. Then, while Mn atoms diffuse deeper into the bulk of ZnO, Zn yMn 3-yO 4 starts to form. Finally, at the highest annealing temperature, Mn appears to be substitutionally diluted at Zn sites within the ZnO lattice.

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JF - Journal of Physical Chemistry C: Nanomaterials and interfaces

IS - 1

ER -

Phase Transitions at the Mn/ZnO(000-1) Interface Probed by High Energy X ray Spectroscopies

Résumé

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Équipement

Microscopie à effet tunnel

Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)

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