Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm

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Résumé

We developed a genetic algorithm to achieve optimal absorption of solar radiation in nano-structured thin films of crystalline silicon (c-Si) for applications in photovoltaics. The device includes on the front side a periodic array of inverted pyramids, with conformal passivation layer (a-Si:H or AlOx) and anti-reflection coating (SiNx). The device also includes on the back side a passivation layer (a-Si:H) and a flat reflector (ITO and Ag). The geometrical parameters of the inverted pyramids as well as the thickness of the different layers must be adjusted in order to maximize the absorption of solar radiations in the c-Si. The genetic algorithm enables the determination of optimal solutions that lead to high performances by evaluating only a reduced number of parameter combinations. The results achieved by the genetic algorithm for a 40μm thick c-Si lead to short-circuit currents of 37 mA/cm2 when a-Si:H is used for the front-side passivation and 39.1 mA/cm2 when transparent AlOx is used instead. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).
langueAnglais
titreProceedings of SPIE
Pages95461N
Nombre de pages10
Volume9546
Les DOIs
étatPublié - 2015

Empreinte digitale

solar radiation
genetic algorithms
passivity
pyramids
silicon
thin films
antireflection coatings
short circuit currents
ITO (semiconductors)
reflectors

Citer ceci

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title = "Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm",
abstract = "We developed a genetic algorithm to achieve optimal absorption of solar radiation in nano-structured thin films of crystalline silicon (c-Si) for applications in photovoltaics. The device includes on the front side a periodic array of inverted pyramids, with conformal passivation layer (a-Si:H or AlOx) and anti-reflection coating (SiNx). The device also includes on the back side a passivation layer (a-Si:H) and a flat reflector (ITO and Ag). The geometrical parameters of the inverted pyramids as well as the thickness of the different layers must be adjusted in order to maximize the absorption of solar radiations in the c-Si. The genetic algorithm enables the determination of optimal solutions that lead to high performances by evaluating only a reduced number of parameter combinations. The results achieved by the genetic algorithm for a 40μm thick c-Si lead to short-circuit currents of 37 mA/cm2 when a-Si:H is used for the front-side passivation and 39.1 mA/cm2 when transparent AlOx is used instead. {\circledC} (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).",
author = "Alexandre Mayer and J{\'e}r{\^o}me Muller and Aline Herman and Olivier Deparis",
year = "2015",
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Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm. / Mayer, Alexandre; Muller, Jérôme; Herman, Aline; Deparis, Olivier.

Proceedings of SPIE. Vol 9546 2015. p. 95461N.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm

AU - Mayer, Alexandre

AU - Muller, Jérôme

AU - Herman, Aline

AU - Deparis, Olivier

PY - 2015

Y1 - 2015

N2 - We developed a genetic algorithm to achieve optimal absorption of solar radiation in nano-structured thin films of crystalline silicon (c-Si) for applications in photovoltaics. The device includes on the front side a periodic array of inverted pyramids, with conformal passivation layer (a-Si:H or AlOx) and anti-reflection coating (SiNx). The device also includes on the back side a passivation layer (a-Si:H) and a flat reflector (ITO and Ag). The geometrical parameters of the inverted pyramids as well as the thickness of the different layers must be adjusted in order to maximize the absorption of solar radiations in the c-Si. The genetic algorithm enables the determination of optimal solutions that lead to high performances by evaluating only a reduced number of parameter combinations. The results achieved by the genetic algorithm for a 40μm thick c-Si lead to short-circuit currents of 37 mA/cm2 when a-Si:H is used for the front-side passivation and 39.1 mA/cm2 when transparent AlOx is used instead. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

AB - We developed a genetic algorithm to achieve optimal absorption of solar radiation in nano-structured thin films of crystalline silicon (c-Si) for applications in photovoltaics. The device includes on the front side a periodic array of inverted pyramids, with conformal passivation layer (a-Si:H or AlOx) and anti-reflection coating (SiNx). The device also includes on the back side a passivation layer (a-Si:H) and a flat reflector (ITO and Ag). The geometrical parameters of the inverted pyramids as well as the thickness of the different layers must be adjusted in order to maximize the absorption of solar radiations in the c-Si. The genetic algorithm enables the determination of optimal solutions that lead to high performances by evaluating only a reduced number of parameter combinations. The results achieved by the genetic algorithm for a 40μm thick c-Si lead to short-circuit currents of 37 mA/cm2 when a-Si:H is used for the front-side passivation and 39.1 mA/cm2 when transparent AlOx is used instead. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE).

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M3 - Conference contribution

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BT - Proceedings of SPIE

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