Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells

O. Deparis, Ounsi El Daif

Résultats de recherche: Contribution à un journal/une revueLettre

Résumé

In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.
langue originaleAnglais
Pages (de - à)4230-4232
Nombre de pages3
journalOptics Letters
Volume37
Numéro de publication20
Les DOIs
étatPublié - 15 oct. 2012

Empreinte digitale

photocurrents
solar cells
optimization
augmentation
amorphous silicon
photonics
refractivity
material absorption
antireflection coatings
thin films
irradiance
incidence
tuning
mirrors
absorption spectra
oxides
photons
silicon
cells
wavelengths

Citer ceci

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title = "Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells",
abstract = "In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10{\%} with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.",
author = "O. Deparis and {El Daif}, Ounsi",
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Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells. / Deparis, O.; El Daif, Ounsi.

Dans: Optics Letters, Vol 37, Numéro 20, 15.10.2012, p. 4230-4232.

Résultats de recherche: Contribution à un journal/une revueLettre

TY - JOUR

T1 - Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells

AU - Deparis, O.

AU - El Daif, Ounsi

PY - 2012/10/15

Y1 - 2012/10/15

N2 - In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.

AB - In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.

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U2 - 10.1364/OL.37.004230

DO - 10.1364/OL.37.004230

M3 - Letter

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VL - 37

SP - 4230

EP - 4232

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

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