Optimization by a genetic algorithm of the light-extraction efficiency of a GaN light-emitting diode

Résultats de recherche: Contribution à un journal/une revueArticle

7 Downloads (Pure)

Résumé

Light extraction from light-emitting materials is fundamentally limited by internal reflections due to the high dielectric-constant contrast between the material that produces the light and the emergent medium. These internal reflections can however be reduced significantly by a well-designed texturation of the surface of the emitting material. We used a genetic algorithm to determine optimal geometrical and material parameters for this texturation, the objective being to maximize the extraction of light of a GaN light-emitting diode. This study, which was restricted to two-dimensional texturations, shows that symmetric triangles actually correspond to the optimal shape. The dielectric constant of the material used for this texturation should ideally have the same dielectric constant as the GaN. The optimal texturation determined in this work leads to a light-extraction efficiency of 11.1%, which improves significantly the value of 3.7% obtained with a flat surface and the value of 5.7% achieved in previous work.
langue originaleAnglais
Pages (de - à)025002
Nombre de pages7
journalJournal of Optics
Volume17
Numéro de publication2
Les DOIs
étatPublié - 2015

Empreinte digitale

genetic algorithms
Light emitting diodes
light emitting diodes
Genetic algorithms
optimization
Permittivity
permittivity
triangles
flat surfaces

Citer ceci

@article{a73a6ef9de1c4fe7b13b3623de3c740d,
title = "Optimization by a genetic algorithm of the light-extraction efficiency of a GaN light-emitting diode",
abstract = "Light extraction from light-emitting materials is fundamentally limited by internal reflections due to the high dielectric-constant contrast between the material that produces the light and the emergent medium. These internal reflections can however be reduced significantly by a well-designed texturation of the surface of the emitting material. We used a genetic algorithm to determine optimal geometrical and material parameters for this texturation, the objective being to maximize the extraction of light of a GaN light-emitting diode. This study, which was restricted to two-dimensional texturations, shows that symmetric triangles actually correspond to the optimal shape. The dielectric constant of the material used for this texturation should ideally have the same dielectric constant as the GaN. The optimal texturation determined in this work leads to a light-extraction efficiency of 11.1{\%}, which improves significantly the value of 3.7{\%} obtained with a flat surface and the value of 5.7{\%} achieved in previous work.",
keywords = "genetic algorithm, light-emitting diode, optimization, light extraction",
author = "Alexandre Mayer and Annick Bay",
year = "2015",
doi = "10.1088/2040-8978/17/2/025002",
language = "English",
volume = "17",
pages = "025002",
journal = "Journal of Optics",
issn = "2040-8978",
publisher = "IOP Publishing Ltd.",
number = "2",

}

Optimization by a genetic algorithm of the light-extraction efficiency of a GaN light-emitting diode. / Mayer, Alexandre; Bay, Annick.

Dans: Journal of Optics, Vol 17, Numéro 2, 2015, p. 025002.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Optimization by a genetic algorithm of the light-extraction efficiency of a GaN light-emitting diode

AU - Mayer, Alexandre

AU - Bay, Annick

PY - 2015

Y1 - 2015

N2 - Light extraction from light-emitting materials is fundamentally limited by internal reflections due to the high dielectric-constant contrast between the material that produces the light and the emergent medium. These internal reflections can however be reduced significantly by a well-designed texturation of the surface of the emitting material. We used a genetic algorithm to determine optimal geometrical and material parameters for this texturation, the objective being to maximize the extraction of light of a GaN light-emitting diode. This study, which was restricted to two-dimensional texturations, shows that symmetric triangles actually correspond to the optimal shape. The dielectric constant of the material used for this texturation should ideally have the same dielectric constant as the GaN. The optimal texturation determined in this work leads to a light-extraction efficiency of 11.1%, which improves significantly the value of 3.7% obtained with a flat surface and the value of 5.7% achieved in previous work.

AB - Light extraction from light-emitting materials is fundamentally limited by internal reflections due to the high dielectric-constant contrast between the material that produces the light and the emergent medium. These internal reflections can however be reduced significantly by a well-designed texturation of the surface of the emitting material. We used a genetic algorithm to determine optimal geometrical and material parameters for this texturation, the objective being to maximize the extraction of light of a GaN light-emitting diode. This study, which was restricted to two-dimensional texturations, shows that symmetric triangles actually correspond to the optimal shape. The dielectric constant of the material used for this texturation should ideally have the same dielectric constant as the GaN. The optimal texturation determined in this work leads to a light-extraction efficiency of 11.1%, which improves significantly the value of 3.7% obtained with a flat surface and the value of 5.7% achieved in previous work.

KW - genetic algorithm

KW - light-emitting diode

KW - optimization

KW - light extraction

U2 - 10.1088/2040-8978/17/2/025002

DO - 10.1088/2040-8978/17/2/025002

M3 - Article

VL - 17

SP - 025002

JO - Journal of Optics

JF - Journal of Optics

SN - 2040-8978

IS - 2

ER -