Résumé
Process simulation arc performed in order to simulate the full fabrication process of an alternative nano-flash memory in order to optimise it and to improve the understanding of the dot storage formation. The influence of various parameters (oxidation temperature, nanowire shape) have been investigated. © 2005 Materials Research Society.
langue originale | Anglais |
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titre | Materials Research Society Symposium Proceeding |
Pages | 45-50 |
Nombre de pages | 6 |
Volume | 830 |
Etat de la publication | Publié - 1 janv. 2005 |