Nucleation and growth of carbon onions synthesized by ion implantation at high temperatures

Elsa THUNE, T. CABIOC'H, M. JAOUEN, Franz Bodart

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

Resonant nuclear reaction analysis and high-resolution transmission electron microscopy experiments were performed on silver substrates implanted at high temperatures (500'700 °C) by 90'120 keV carbon ions. These characterizations revealed that three different carbon components were synthesized during the implantation process. At the beginning of the implantation process (e.g., for low doses), an amorphous carbon component forms onto the silver surface and at the silver grain boundaries. The nucleation and growth of the carbon onions take place inside the bulk of the metallic substrates when the carbon concentration increases. We also observe the formation of empty carbon nanocapsules which is attributed to a carbon precipitation around nanometer-sized silver grains, the so-encapsulated Ag atoms surprisingly leaving out from the carbon cage. Comparison between carbon concentration profiles and carbon onions sizes allows us to discuss the growth mechanism. It is proposed that two different regimes act: whereas radiation-enhanced diffusion could be involved only for implantation depths lower than the average projected range of the implanted carbon ions, a simple thermal regime governs the growth of the carbon onions in depth.
langue originaleAnglais
journalPhysical Review B
VolumeB68
Numéro de publication11
étatPublié - 2003

Empreinte digitale

Ion implantation
ion implantation
Nucleation
Carbon
nucleation
carbon
Silver
Temperature
silver
implantation
Ions
Nanocapsules
Nuclear reactions
Amorphous carbon
Substrates
High resolution transmission electron microscopy
nuclear reactions
Grain boundaries
ions
grain boundaries

Citer ceci

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title = "Nucleation and growth of carbon onions synthesized by ion implantation at high temperatures",
abstract = "Resonant nuclear reaction analysis and high-resolution transmission electron microscopy experiments were performed on silver substrates implanted at high temperatures (500'700 °C) by 90'120 keV carbon ions. These characterizations revealed that three different carbon components were synthesized during the implantation process. At the beginning of the implantation process (e.g., for low doses), an amorphous carbon component forms onto the silver surface and at the silver grain boundaries. The nucleation and growth of the carbon onions take place inside the bulk of the metallic substrates when the carbon concentration increases. We also observe the formation of empty carbon nanocapsules which is attributed to a carbon precipitation around nanometer-sized silver grains, the so-encapsulated Ag atoms surprisingly leaving out from the carbon cage. Comparison between carbon concentration profiles and carbon onions sizes allows us to discuss the growth mechanism. It is proposed that two different regimes act: whereas radiation-enhanced diffusion could be involved only for implantation depths lower than the average projected range of the implanted carbon ions, a simple thermal regime governs the growth of the carbon onions in depth.",
author = "Elsa THUNE and T. CABIOC'H and M. JAOUEN and Franz Bodart",
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year = "2003",
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Nucleation and growth of carbon onions synthesized by ion implantation at high temperatures. / THUNE, Elsa; CABIOC'H, T.; JAOUEN, M.; Bodart, Franz.

Dans: Physical Review B, Vol B68, Numéro 11, 2003.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Nucleation and growth of carbon onions synthesized by ion implantation at high temperatures

AU - THUNE, Elsa

AU - CABIOC'H, T.

AU - JAOUEN, M.

AU - Bodart, Franz

N1 - Publication code : **RES. ACAD.

PY - 2003

Y1 - 2003

N2 - Resonant nuclear reaction analysis and high-resolution transmission electron microscopy experiments were performed on silver substrates implanted at high temperatures (500'700 °C) by 90'120 keV carbon ions. These characterizations revealed that three different carbon components were synthesized during the implantation process. At the beginning of the implantation process (e.g., for low doses), an amorphous carbon component forms onto the silver surface and at the silver grain boundaries. The nucleation and growth of the carbon onions take place inside the bulk of the metallic substrates when the carbon concentration increases. We also observe the formation of empty carbon nanocapsules which is attributed to a carbon precipitation around nanometer-sized silver grains, the so-encapsulated Ag atoms surprisingly leaving out from the carbon cage. Comparison between carbon concentration profiles and carbon onions sizes allows us to discuss the growth mechanism. It is proposed that two different regimes act: whereas radiation-enhanced diffusion could be involved only for implantation depths lower than the average projected range of the implanted carbon ions, a simple thermal regime governs the growth of the carbon onions in depth.

AB - Resonant nuclear reaction analysis and high-resolution transmission electron microscopy experiments were performed on silver substrates implanted at high temperatures (500'700 °C) by 90'120 keV carbon ions. These characterizations revealed that three different carbon components were synthesized during the implantation process. At the beginning of the implantation process (e.g., for low doses), an amorphous carbon component forms onto the silver surface and at the silver grain boundaries. The nucleation and growth of the carbon onions take place inside the bulk of the metallic substrates when the carbon concentration increases. We also observe the formation of empty carbon nanocapsules which is attributed to a carbon precipitation around nanometer-sized silver grains, the so-encapsulated Ag atoms surprisingly leaving out from the carbon cage. Comparison between carbon concentration profiles and carbon onions sizes allows us to discuss the growth mechanism. It is proposed that two different regimes act: whereas radiation-enhanced diffusion could be involved only for implantation depths lower than the average projected range of the implanted carbon ions, a simple thermal regime governs the growth of the carbon onions in depth.

M3 - Article

VL - B68

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 2469-9950

IS - 11

ER -