Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates

Dodji Amouzou, Philippe Guaino, Jacques Dumont, Lionel Fourdrinier, Jean Baptiste Richir, Robert Sporken, Fabrizio Maseri

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

For the fabrication of monolithically integrated flexible CIGS modules on stainless steel, individual photovoltaic cells must be insulated from the metal substrates by a barrier layer that can sustain high temperature treatment. In this work combination of sol-gel (organosilane-sol) and sputtered SiAl xO y thin layers (TDBL) were prepared on stainless steel substrates. At first, the deposition of organosilane-sol dielectric layers on the commercial AISI-316-2RB stainless steel (Rz = 500 nm, RMS= 56 nm) induces a planarization of the surfaces (RMS = 16.4nm, Rz =176nm). The leakage current in DC mode through the dielectric layers was measured by preparing metal-insulator-metal (MIM) junction that acts as capacitor. This method proposed here allowed us to quantify the quality the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non annealed and annealed samples based sol-gel double layer. A yield of 100% has been reached with reinforced PCDP by sputtered SiAl xO y thin layer showing perfect electrical insulation. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy (GDOES) measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could spoil the electronic and optical properties of CIGS based photovoltaic cells.

langue originaleAnglais
titreProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Sous-titreConference Record of the IEEE Photovoltaic Specialists Conference
Lieu de publicationSeattle (WA)
Pages1229-1234
Nombre de pages6
Les DOIs
étatPublié - 2011
Evénement37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, États-Unis
Durée: 19 juin 201124 juin 2011

Une conférence

Une conférence37th IEEE Photovoltaic Specialists Conference, PVSC 2011
PaysÉtats-Unis
La villeSeattle, WA
période19/06/1124/06/11

Empreinte digitale

Solar cells
Stainless steel
Substrates
Metals
Capacitors
Photovoltaic cells
Sols
Sol-gels
Optical emission spectroscopy
Glow discharges
Hot Temperature
Leakage currents
Electronic properties
Insulation
Optical properties
Fabrication
Atoms
Temperature

Citer ceci

Amouzou, D., Guaino, P., Dumont, J., Fourdrinier, L., Richir, J. B., Sporken, R., & Maseri, F. (2011). Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates. Dans Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011: Conference Record of the IEEE Photovoltaic Specialists Conference (p. 1229-1234). [6186179] Seattle (WA). https://doi.org/10.1109/PVSC.2011.6186179
Amouzou, Dodji ; Guaino, Philippe ; Dumont, Jacques ; Fourdrinier, Lionel ; Richir, Jean Baptiste ; Sporken, Robert ; Maseri, Fabrizio. / Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates. Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011: Conference Record of the IEEE Photovoltaic Specialists Conference. Seattle (WA), 2011. p. 1229-1234
@inproceedings{7f476b85996f4b0d8b093721fc9cbeb9,
title = "Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates",
abstract = "For the fabrication of monolithically integrated flexible CIGS modules on stainless steel, individual photovoltaic cells must be insulated from the metal substrates by a barrier layer that can sustain high temperature treatment. In this work combination of sol-gel (organosilane-sol) and sputtered SiAl xO y thin layers (TDBL) were prepared on stainless steel substrates. At first, the deposition of organosilane-sol dielectric layers on the commercial AISI-316-2RB stainless steel (Rz = 500 nm, RMS= 56 nm) induces a planarization of the surfaces (RMS = 16.4nm, Rz =176nm). The leakage current in DC mode through the dielectric layers was measured by preparing metal-insulator-metal (MIM) junction that acts as capacitor. This method proposed here allowed us to quantify the quality the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95{\%} and 50{\%} has been reached respectively with non annealed and annealed samples based sol-gel double layer. A yield of 100{\%} has been reached with reinforced PCDP by sputtered SiAl xO y thin layer showing perfect electrical insulation. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy (GDOES) measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could spoil the electronic and optical properties of CIGS based photovoltaic cells.",
author = "Dodji Amouzou and Philippe Guaino and Jacques Dumont and Lionel Fourdrinier and Richir, {Jean Baptiste} and Robert Sporken and Fabrizio Maseri",
year = "2011",
doi = "10.1109/PVSC.2011.6186179",
language = "English",
isbn = "9781424499656",
pages = "1229--1234",
booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

}

Amouzou, D, Guaino, P, Dumont, J, Fourdrinier, L, Richir, JB, Sporken, R & Maseri, F 2011, Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates. Dans Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011: Conference Record of the IEEE Photovoltaic Specialists Conference., 6186179, Seattle (WA), p. 1229-1234, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, États-Unis, 19/06/11. https://doi.org/10.1109/PVSC.2011.6186179

Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates. / Amouzou, Dodji; Guaino, Philippe; Dumont, Jacques; Fourdrinier, Lionel; Richir, Jean Baptiste; Sporken, Robert; Maseri, Fabrizio.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011: Conference Record of the IEEE Photovoltaic Specialists Conference. Seattle (WA), 2011. p. 1229-1234 6186179.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates

AU - Amouzou, Dodji

AU - Guaino, Philippe

AU - Dumont, Jacques

AU - Fourdrinier, Lionel

AU - Richir, Jean Baptiste

AU - Sporken, Robert

AU - Maseri, Fabrizio

PY - 2011

Y1 - 2011

N2 - For the fabrication of monolithically integrated flexible CIGS modules on stainless steel, individual photovoltaic cells must be insulated from the metal substrates by a barrier layer that can sustain high temperature treatment. In this work combination of sol-gel (organosilane-sol) and sputtered SiAl xO y thin layers (TDBL) were prepared on stainless steel substrates. At first, the deposition of organosilane-sol dielectric layers on the commercial AISI-316-2RB stainless steel (Rz = 500 nm, RMS= 56 nm) induces a planarization of the surfaces (RMS = 16.4nm, Rz =176nm). The leakage current in DC mode through the dielectric layers was measured by preparing metal-insulator-metal (MIM) junction that acts as capacitor. This method proposed here allowed us to quantify the quality the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non annealed and annealed samples based sol-gel double layer. A yield of 100% has been reached with reinforced PCDP by sputtered SiAl xO y thin layer showing perfect electrical insulation. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy (GDOES) measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could spoil the electronic and optical properties of CIGS based photovoltaic cells.

AB - For the fabrication of monolithically integrated flexible CIGS modules on stainless steel, individual photovoltaic cells must be insulated from the metal substrates by a barrier layer that can sustain high temperature treatment. In this work combination of sol-gel (organosilane-sol) and sputtered SiAl xO y thin layers (TDBL) were prepared on stainless steel substrates. At first, the deposition of organosilane-sol dielectric layers on the commercial AISI-316-2RB stainless steel (Rz = 500 nm, RMS= 56 nm) induces a planarization of the surfaces (RMS = 16.4nm, Rz =176nm). The leakage current in DC mode through the dielectric layers was measured by preparing metal-insulator-metal (MIM) junction that acts as capacitor. This method proposed here allowed us to quantify the quality the quality of our TDBL insulating layer and its lateral uniformity. Indeed, evaluating a ratio of the number of valid MIM capacitors to the number of tested MIM capacitors, a yield of ∼ 95% and 50% has been reached respectively with non annealed and annealed samples based sol-gel double layer. A yield of 100% has been reached with reinforced PCDP by sputtered SiAl xO y thin layer showing perfect electrical insulation. Since this yield is obtained on several samples, it can be extrapolated to any substrate size. Furthermore, according to Glow Discharge Optical Emission Spectroscopy (GDOES) measurements, these barrier layers exhibit excellent barrier properties against the diffusion of undesired atoms which could spoil the electronic and optical properties of CIGS based photovoltaic cells.

UR - http://www.scopus.com/inward/record.url?scp=84861021473&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2011.6186179

DO - 10.1109/PVSC.2011.6186179

M3 - Conference contribution

AN - SCOPUS:84861021473

SN - 9781424499656

SP - 1229

EP - 1234

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

CY - Seattle (WA)

ER -

Amouzou D, Guaino P, Dumont J, Fourdrinier L, Richir JB, Sporken R et al. Novel high thermal barrier layers for flexible CIGS solar cells on stainless steel substrates. Dans Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011: Conference Record of the IEEE Photovoltaic Specialists Conference. Seattle (WA). 2011. p. 1229-1234. 6186179 https://doi.org/10.1109/PVSC.2011.6186179