Molecular beam epitaxy and characterization of HgCdTe on Si(100)

Robert Sporken; M.D. Lange; Sivalingam Sivananthan; J.P.  Faurie

doi:10.1063/1.105530

Molecular beam epitaxy and characterization of HgCdTe on Si(100)

Robert Sporken, M.D. Lange, Sivalingam Sivananthan, J.P. Faurie

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Résumé

Up to 10‐μm‐thick HgCdTe(111)B films with 3 in. and 5 in. diameter were grown on Si(100) substrates. The films are n type, and Hall mobilities higher than 5×104 cm2 V−1 s−1 have been measured at 23 K for Cd concentration 0.26. Double‐crystal rocking curves of the HgCdTe(333) x‐ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.

langue originale	Anglais
Pages (de - à)	81-83
journal	Applied Physics Letters
Volume	59
Numéro de publication	1
Les DOIs	https://doi.org/10.1063/1.105530
Etat de la publication	Publié - 1991

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title = "Molecular beam epitaxy and characterization of HgCdTe on Si(100)",

abstract = "Up to 10‐μm‐thick HgCdTe(111)B films with 3 in. and 5 in. diameter were grown on Si(100) substrates. The films are n type, and Hall mobilities higher than 5×104 cm2 V−1 s−1 have been measured at 23 K for Cd concentration 0.26. Double‐crystal rocking curves of the HgCdTe(333) x‐ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.",

author = "Robert Sporken and M.D. Lange and Sivalingam Sivananthan and J.P. Faurie",

year = "1991",

doi = "10.1063/1.105530",

language = "English",

volume = "59",

pages = "81--83",

journal = "Applied Physics Letters",

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T1 - Molecular beam epitaxy and characterization of HgCdTe on Si(100)

AU - Sporken, Robert

AU - Lange, M.D.

AU - Sivananthan, Sivalingam

AU - Faurie, J.P.

PY - 1991

Y1 - 1991

N2 - Up to 10‐μm‐thick HgCdTe(111)B films with 3 in. and 5 in. diameter were grown on Si(100) substrates. The films are n type, and Hall mobilities higher than 5×104 cm2 V−1 s−1 have been measured at 23 K for Cd concentration 0.26. Double‐crystal rocking curves of the HgCdTe(333) x‐ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.

AB - Up to 10‐μm‐thick HgCdTe(111)B films with 3 in. and 5 in. diameter were grown on Si(100) substrates. The films are n type, and Hall mobilities higher than 5×104 cm2 V−1 s−1 have been measured at 23 K for Cd concentration 0.26. Double‐crystal rocking curves of the HgCdTe(333) x‐ray diffraction peak with full width at half maximum as low as 180 arcsec were measured, indicating that the crystalline quality of the HgCdTe is significantly better than that of the CdTe. The Cd concentration of these films is very uniform, with a standard deviation of 2.4% of the average concentration for 5 in. samples and 0.6% for 3 in. samples.

U2 - 10.1063/1.105530

DO - 10.1063/1.105530

M3 - Article

SN - 0003-6951

VL - 59

SP - 81

EP - 83

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Molecular beam epitaxy and characterization of HgCdTe on Si(100)

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