Molecular beam epitaxial growth of CdTe and HgCdTe on silicon by MBE

Robert Sporken; Sivalingam Sivananthan; K.K. Mahavadi; G. Monfroy; M. Boukerche; J. P. Faurie

doi:10.1063/1.102159

Molecular beam epitaxial growth of CdTe and HgCdTe on silicon by MBE

Robert Sporken, Sivalingam Sivananthan, K.K. Mahavadi, G. Monfroy, M. Boukerche, J. P. Faurie

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Résumé

CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high‐energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x‐ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).

langue originale	Anglais
Pages (de - à)	1879-1881
journal	Applied Physics Letters
Volume	55
Numéro de publication	18
Les DOIs	https://doi.org/10.1063/1.102159
Etat de la publication	Publié - 1989

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10.1063/1.102159

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@article{30ee74a01d1f40ec9c1ab41beec889a0,

title = "Molecular beam epitaxial growth of CdTe and HgCdTe on silicon by MBE",

abstract = "CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high‐energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x‐ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).",

author = "Robert Sporken and Sivalingam Sivananthan and K.K. Mahavadi and G. Monfroy and M. Boukerche and Faurie, {J. P.}",

year = "1989",

doi = "10.1063/1.102159",

language = "English",

volume = "55",

pages = "1879--1881",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Molecular beam epitaxial growth of CdTe and HgCdTe on silicon by MBE

AU - Sporken, Robert

AU - Sivananthan, Sivalingam

AU - Mahavadi, K.K.

AU - Monfroy, G.

AU - Boukerche, M.

AU - Faurie, J. P.

PY - 1989

Y1 - 1989

N2 - CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high‐energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x‐ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).

AB - CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high‐energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x‐ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).

U2 - 10.1063/1.102159

DO - 10.1063/1.102159

M3 - Article

SN - 0003-6951

VL - 55

SP - 1879

EP - 1881

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Molecular beam epitaxial growth of CdTe and HgCdTe on silicon by MBE

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