Metal filling by high power impulse magnetron sputtering

Lukas Jablonka, Pavel Moskovkin, Zhen Zhang, Shi Li Zhang, Stéphane Lucas, Tomas Kubart

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

High power impulse magnetron sputtering (HiPIMS) is an emerging thin film deposition technology that provides a highly ionized flux of sputtered species. This makes HiPIMS attractive for metal filling of nanosized holes for highly scaled semiconductor devices. In this work, HiPIMS filling with Cu and Co is investigated. We show that the quality of the hole filling is determined mainly by the fraction of ions in the deposited flux and their energy. The discharge waveforms alone are insufficient to determine the ionization of the metal flux. The experimental results are in a good agreement with Monte-Carlo simulations using the measured flux characteristics. Based on the simulations, strategies to improve the filling are discussed.

langue originaleAnglais
Numéro d'article365202
journalJournal of Physics D: Applied Physics
Volume52
Numéro de publication36
Les DOIs
étatPublié - 8 juil. 2019

Empreinte digitale

Magnetron sputtering
impulses
magnetron sputtering
Metals
Fluxes
metals
Semiconductor devices
semiconductor devices
Ionization
emerging
waveforms
simulation
Ions
ionization
Thin films
thin films
ions
energy

Citer ceci

Jablonka, Lukas ; Moskovkin, Pavel ; Zhang, Zhen ; Zhang, Shi Li ; Lucas, Stéphane ; Kubart, Tomas. / Metal filling by high power impulse magnetron sputtering. Dans: Journal of Physics D: Applied Physics. 2019 ; Vol 52, Numéro 36.
@article{ff8f65968408488a9013c0ded9ed61ce,
title = "Metal filling by high power impulse magnetron sputtering",
abstract = "High power impulse magnetron sputtering (HiPIMS) is an emerging thin film deposition technology that provides a highly ionized flux of sputtered species. This makes HiPIMS attractive for metal filling of nanosized holes for highly scaled semiconductor devices. In this work, HiPIMS filling with Cu and Co is investigated. We show that the quality of the hole filling is determined mainly by the fraction of ions in the deposited flux and their energy. The discharge waveforms alone are insufficient to determine the ionization of the metal flux. The experimental results are in a good agreement with Monte-Carlo simulations using the measured flux characteristics. Based on the simulations, strategies to improve the filling are discussed.",
keywords = "metallization, HiPIMS, ionized sputtering",
author = "Lukas Jablonka and Pavel Moskovkin and Zhen Zhang and Zhang, {Shi Li} and St{\'e}phane Lucas and Tomas Kubart",
year = "2019",
month = "7",
day = "8",
doi = "10.1088/1361-6463/ab28e2",
language = "English",
volume = "52",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "36",

}

Metal filling by high power impulse magnetron sputtering. / Jablonka, Lukas; Moskovkin, Pavel; Zhang, Zhen; Zhang, Shi Li; Lucas, Stéphane; Kubart, Tomas.

Dans: Journal of Physics D: Applied Physics, Vol 52, Numéro 36, 365202, 08.07.2019.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Metal filling by high power impulse magnetron sputtering

AU - Jablonka, Lukas

AU - Moskovkin, Pavel

AU - Zhang, Zhen

AU - Zhang, Shi Li

AU - Lucas, Stéphane

AU - Kubart, Tomas

PY - 2019/7/8

Y1 - 2019/7/8

N2 - High power impulse magnetron sputtering (HiPIMS) is an emerging thin film deposition technology that provides a highly ionized flux of sputtered species. This makes HiPIMS attractive for metal filling of nanosized holes for highly scaled semiconductor devices. In this work, HiPIMS filling with Cu and Co is investigated. We show that the quality of the hole filling is determined mainly by the fraction of ions in the deposited flux and their energy. The discharge waveforms alone are insufficient to determine the ionization of the metal flux. The experimental results are in a good agreement with Monte-Carlo simulations using the measured flux characteristics. Based on the simulations, strategies to improve the filling are discussed.

AB - High power impulse magnetron sputtering (HiPIMS) is an emerging thin film deposition technology that provides a highly ionized flux of sputtered species. This makes HiPIMS attractive for metal filling of nanosized holes for highly scaled semiconductor devices. In this work, HiPIMS filling with Cu and Co is investigated. We show that the quality of the hole filling is determined mainly by the fraction of ions in the deposited flux and their energy. The discharge waveforms alone are insufficient to determine the ionization of the metal flux. The experimental results are in a good agreement with Monte-Carlo simulations using the measured flux characteristics. Based on the simulations, strategies to improve the filling are discussed.

KW - metallization

KW - HiPIMS

KW - ionized sputtering

UR - http://www.scopus.com/inward/record.url?scp=85073700273&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/ab28e2

DO - 10.1088/1361-6463/ab28e2

M3 - Article

AN - SCOPUS:85073700273

VL - 52

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 36

M1 - 365202

ER -