Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation

M. K. Weldon, V. E. Marsico, Y. J. Chabal, M. Collot, Y. Caudano, S. B. Christman, E. E. Chaban, D. C. Jacobson, W. L. Brown, J. Sapjeta, C. M. Hsieh, C. A. Goodwin, A. Agarwal, V. C. Venezia, T. E. Haynes, W. B. Jackson

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Résumé

Different hydrogen implantation conditions as well as co-implantation of various elemental species are used to study the different exfoliation mechanisms. Substantial differences between the concentration/thermal evolution of the bound hydrogen of pure H-implantation and He/H co-implantation are shown. For co-implantation, the initial concentration of Si-H species decreased compared to pure H-implantation. The balance of implanted hydrogen must be in the form of molecular hydrogen that is invisible to infrared radiation.

langue originaleAnglais
titreIEEE International SOI Conference
rédacteurs en chef Anon
EditeurIEEE
Pages124-125
Nombre de pages2
étatPublié - 1997
EvénementProceedings of the 1997 IEEE International SOI Conference - Fish Camp, États-Unis
Durée: 6 oct. 19979 oct. 1997

Une conférence

Une conférenceProceedings of the 1997 IEEE International SOI Conference
PaysÉtats-Unis
La villeFish Camp
période6/10/979/10/97

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Contient cette citation

Weldon, M. K., Marsico, V. E., Chabal, Y. J., Collot, M., Caudano, Y., Christman, S. B., ... Jackson, W. B. (1997). Mechanism of silicon exfoliation by hydrogen implantation and He, Li and Si co-implantation. Dans Anon (Ed.), IEEE International SOI Conference (p. 124-125). IEEE.