Measurement and modeling of work function changes during low energy cesium sputtering

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon's work function change was found to be -2.3 eV during 500 eV Cs bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10 C m/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.
langue originaleAnglais
Pages (de - à)1467-1472
Nombre de pages6
journalSurface Science
Volume601
Numéro de publication6
Les DOIs
étatPublié - 15 mars 2007

Empreinte digitale

Cesium
cesium
Sputtering
sputtering
Silicon
energy
bombardment
silicon
cesium ions
Ions
secondary ion mass spectrometry
Secondary ion mass spectrometry
Silicon wafers
analyzers
energy distribution
wafers
adsorption
shift
Adsorption
ions

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abstract = "In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon's work function change was found to be -2.3 eV during 500 eV Cs bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10 C m/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.",
author = "J. Brison and N. Mine and S. Poisseroux and B. Douhard and R.G. Vitchev and L. Houssiau",
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Measurement and modeling of work function changes during low energy cesium sputtering. / Brison, J.; Mine, N.; Poisseroux, S.; Douhard, B.; Vitchev, R.G.; Houssiau, L.

Dans: Surface Science, Vol 601, Numéro 6, 15.03.2007, p. 1467-1472.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Measurement and modeling of work function changes during low energy cesium sputtering

AU - Brison, J.

AU - Mine, N.

AU - Poisseroux, S.

AU - Douhard, B.

AU - Vitchev, R.G.

AU - Houssiau, L.

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Y1 - 2007/3/15

N2 - In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon's work function change was found to be -2.3 eV during 500 eV Cs bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10 C m/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.

AB - In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were measured for different analysis conditions. This measurement was performed by measuring the shift of the secondary ions energy distributions with a reflectron type analyzer. At first, the silicon's work function change was found to be -2.3 eV during 500 eV Cs bombardment at 45°. This effect is due to the creation of a dipolar layer at the surface of the silicon by the implanted cesium. Then the work function variation was measured at 300 eV for varying cesium surface concentrations. The work function was found to decrease monotonously with the increasing cesium surface concentration, as during cesium adsorption experiments. The results were modeled following three different approaches and the value of the effective polarizability α of cesium was found to be equal to 1.9 × 10 C m/V. Finally, the effect of the bombardment energy on the work function variation was studied for beams with energies ranging from 250 to 2000 eV. The effective polarizability of cesium was found to increase with increasing Cs beam energy.

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