Light element impurities in ion beam bombarded Au-Al layers

H and O depth distributions in thin AuAl layers were measured with the 15N technique and high-energy backscattering spectroscopy using 7.6 MeV 4He ions, respectively. The double layer systems (, thickness 290 nm) were produced by evaporation onto various substrates at the same time and subsequently interdiffused in a few minutes with 2.0 MeV 4He+ ions. Significant differences in the amounts of H and O in the as-deposited AuAl double layers and in dependence on the used substrates (C, Al, Si, Au) were observed. Furthermore, after ion beam irradiation, the H and O depth profiles changed drastically, both light elements were no longer found in the interdiffused layers.