Investigation of interfaces by high resolution electron energy loss spectroscopy

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Recent measurements performed on epitaxial layers clearly demonstrate the capability of HREELS to observe interface optical phonons in dielectric layered materials. Two examples are presented: First, the case of epitaxial CaF on Si(111) where the CaF interface phonon is detected for a whole range of CaF layer thicknesses. Discrepancies with theoretical predictions are interpreted as resulting from the residual strain in the CaF layers. The second example is a III-V semiconductor superlattice GaAs-AlGaAs in which an Al-As type interface mode is clearly identified and quantitatively interpreted by the dielectric theory.
langue originaleAnglais
Pages (de - à)373-378
Nombre de pages6
journalSurface Science
Numéro de publicationC
Etat de la publicationPublié - 2 oct. 1987

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