Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

Alex Polizzotti, Alireza Faghaninia, Jeremy R. Poindexter, Lea Nienhaus, Vera Steinmann, Robert L.Z. Hoye, Alexandre Felten, Amjad Deyine, Niall M. Mangan, Juan Pablo Correa-Baena, Seong Sik Shin, Shaffiq Jaffer, Moungi G. Bawendi, Cynthia Lo, Tonio Buonassisi

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

langueAnglais
Pages3661-3667
Nombre de pages7
journalJournal of Physical Chemistry Letters
Volume8
Numéro15
Les DOIs
étatPublié - 3 août 2017

Empreinte digitale

Carrier lifetime
Point defects
Tin
Sulfur
Defects
Thin films
Vacancies
Crystalline materials
Sulfides
tin sulfide

Citer ceci

Polizzotti, A., Faghaninia, A., Poindexter, J. R., Nienhaus, L., Steinmann, V., Hoye, R. L. Z., ... Buonassisi, T. (2017). Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects. Journal of Physical Chemistry Letters, 8(15), 3661-3667. DOI: 10.1021/acs.jpclett.7b01406
Polizzotti, Alex ; Faghaninia, Alireza ; Poindexter, Jeremy R. ; Nienhaus, Lea ; Steinmann, Vera ; Hoye, Robert L.Z. ; Felten, Alexandre ; Deyine, Amjad ; Mangan, Niall M. ; Correa-Baena, Juan Pablo ; Shin, Seong Sik ; Jaffer, Shaffiq ; Bawendi, Moungi G. ; Lo, Cynthia ; Buonassisi, Tonio. / Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects. Dans: Journal of Physical Chemistry Letters. 2017 ; Vol 8, Numéro 15. p. 3661-3667
@article{dbdeb6cfa4974c9e8edbc3b68bb10229,
title = "Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects",
abstract = "Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10{\%} device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.",
author = "Alex Polizzotti and Alireza Faghaninia and Poindexter, {Jeremy R.} and Lea Nienhaus and Vera Steinmann and Hoye, {Robert L.Z.} and Alexandre Felten and Amjad Deyine and Mangan, {Niall M.} and Correa-Baena, {Juan Pablo} and Shin, {Seong Sik} and Shaffiq Jaffer and Bawendi, {Moungi G.} and Cynthia Lo and Tonio Buonassisi",
year = "2017",
month = "8",
day = "3",
doi = "10.1021/acs.jpclett.7b01406",
language = "English",
volume = "8",
pages = "3661--3667",
journal = "Journal of Physical Chemistry Letters",
issn = "0366-7022",
publisher = "Chemical Society of Japan",
number = "15",

}

Polizzotti, A, Faghaninia, A, Poindexter, JR, Nienhaus, L, Steinmann, V, Hoye, RLZ, Felten, A, Deyine, A, Mangan, NM, Correa-Baena, JP, Shin, SS, Jaffer, S, Bawendi, MG, Lo, C & Buonassisi, T 2017, 'Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects' Journal of Physical Chemistry Letters, VOL. 8, Numéro 15, p. 3661-3667. DOI: 10.1021/acs.jpclett.7b01406

Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects. / Polizzotti, Alex; Faghaninia, Alireza; Poindexter, Jeremy R.; Nienhaus, Lea; Steinmann, Vera; Hoye, Robert L.Z.; Felten, Alexandre; Deyine, Amjad; Mangan, Niall M.; Correa-Baena, Juan Pablo; Shin, Seong Sik; Jaffer, Shaffiq; Bawendi, Moungi G.; Lo, Cynthia; Buonassisi, Tonio.

Dans: Journal of Physical Chemistry Letters, Vol 8, Numéro 15, 03.08.2017, p. 3661-3667.

Résultats de recherche: Contribution à un journal/une revueArticle

TY - JOUR

T1 - Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects

AU - Polizzotti,Alex

AU - Faghaninia,Alireza

AU - Poindexter,Jeremy R.

AU - Nienhaus,Lea

AU - Steinmann,Vera

AU - Hoye,Robert L.Z.

AU - Felten,Alexandre

AU - Deyine,Amjad

AU - Mangan,Niall M.

AU - Correa-Baena,Juan Pablo

AU - Shin,Seong Sik

AU - Jaffer,Shaffiq

AU - Bawendi,Moungi G.

AU - Lo,Cynthia

AU - Buonassisi,Tonio

PY - 2017/8/3

Y1 - 2017/8/3

N2 - Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

AB - Tin monosulfide (SnS) is an emerging thin-film absorber material for photovoltaics. An outstanding challenge is to improve carrier lifetimes to >1 ns, which should enable >10% device efficiencies. However, reported results to date have only demonstrated lifetimes at or below 100 ps. In this study, we employ defect modeling to identify the sulfur vacancy and defects from Fe, Co, and Mo as most recombination-active. We attempt to minimize these defects in crystalline samples through high-purity, sulfur-rich growth and experimentally improve lifetimes to >3 ns, thus achieving our 1 ns goal. This framework may prove effective for unlocking the lifetime potential in other emerging thin-film materials by rapidly identifying and mitigating lifetime-limiting point defects.

UR - http://www.scopus.com/inward/record.url?scp=85026804425&partnerID=8YFLogxK

U2 - 10.1021/acs.jpclett.7b01406

DO - 10.1021/acs.jpclett.7b01406

M3 - Article

VL - 8

SP - 3661

EP - 3667

JO - Journal of Physical Chemistry Letters

T2 - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 0366-7022

IS - 15

ER -

Polizzotti A, Faghaninia A, Poindexter JR, Nienhaus L, Steinmann V, Hoye RLZ et al. Improving the Carrier Lifetime of Tin Sulfide via Prediction and Mitigation of Harmful Point Defects. Journal of Physical Chemistry Letters. 2017 août 3;8(15):3661-3667. Disponible �, DOI: 10.1021/acs.jpclett.7b01406