Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

G. Larrieu, E. Dubois, D. Yarekha, N. Breil, N. Reckinger, X. Tang, J. Ratajczak, A. Laszcz

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60% improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. © 2008 Elsevier B.V. All rights reserved.
langue originaleAnglais
titreMaterials science and engineering B
Pages159-162
Nombre de pages4
Volume154-155
Les DOIs
étatPublié - 5 déc. 2008

Empreinte digitale

field effect transistors
immunity
carrier mobility
silicon

Citer ceci

Larrieu, G., Dubois, E., Yarekha, D., Breil, N., Reckinger, N., Tang, X., ... Laszcz, A. (2008). Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Dans Materials science and engineering B (Vol 154-155, p. 159-162) https://doi.org/10.1016/j.mseb.2008.10.014
Larrieu, G. ; Dubois, E. ; Yarekha, D. ; Breil, N. ; Reckinger, N. ; Tang, X. ; Ratajczak, J. ; Laszcz, A. / Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Materials science and engineering B. Vol 154-155 2008. p. 159-162
@inproceedings{e3ad1b00908646529ea954cd148d9521,
title = "Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance",
abstract = "This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60{\%} improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. {\circledC} 2008 Elsevier B.V. All rights reserved.",
author = "G. Larrieu and E. Dubois and D. Yarekha and N. Breil and N. Reckinger and X. Tang and J. Ratajczak and A. Laszcz",
year = "2008",
month = "12",
day = "5",
doi = "10.1016/j.mseb.2008.10.014",
language = "English",
volume = "154-155",
pages = "159--162",
booktitle = "Materials science and engineering B",

}

Larrieu, G, Dubois, E, Yarekha, D, Breil, N, Reckinger, N, Tang, X, Ratajczak, J & Laszcz, A 2008, Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Dans Materials science and engineering B. VOL. 154-155, p. 159-162. https://doi.org/10.1016/j.mseb.2008.10.014

Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. / Larrieu, G.; Dubois, E.; Yarekha, D.; Breil, N.; Reckinger, N.; Tang, X.; Ratajczak, J.; Laszcz, A.

Materials science and engineering B. Vol 154-155 2008. p. 159-162.

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

TY - GEN

T1 - Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

AU - Larrieu, G.

AU - Dubois, E.

AU - Yarekha, D.

AU - Breil, N.

AU - Reckinger, N.

AU - Tang, X.

AU - Ratajczak, J.

AU - Laszcz, A.

PY - 2008/12/5

Y1 - 2008/12/5

N2 - This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60% improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. © 2008 Elsevier B.V. All rights reserved.

AB - This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 × 10 cm is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 × 10 cm) was successfully achieved, demonstrating an overall 60% improvement in current drive at L = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I, I, immunity against short channel effects (Swing and DIBL), is presented. © 2008 Elsevier B.V. All rights reserved.

UR - http://www.scopus.com/inward/record.url?scp=57049086917&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2008.10.014

DO - 10.1016/j.mseb.2008.10.014

M3 - Conference contribution

VL - 154-155

SP - 159

EP - 162

BT - Materials science and engineering B

ER -

Larrieu G, Dubois E, Yarekha D, Breil N, Reckinger N, Tang X et al. Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Dans Materials science and engineering B. Vol 154-155. 2008. p. 159-162 https://doi.org/10.1016/j.mseb.2008.10.014