Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance

G. Larrieu, Emmanuel Dubois, D.A. Yarekha, N. Breil, Nicolas Reckinger, Xiaohui Tang, J. Ratajczak, A. Laszcz

Résultats de recherche: Contribution à un événement scientifique (non publié) › Résumé › Revue par des pairs

langue originale	Anglais
Etat de la publication	Publié - 2008
Evénement	European Materials Research Society - Spring Meeting - Strasbourg, France Durée: 26 mai 2008 → 30 mai 2008

Comité scientifique	European Materials Research Society - Spring Meeting
Pays/Territoire	France
La ville	Strasbourg
période	26/05/08 → 30/05/08

Contient cette citation

@conference{875e5107562943c0962c6827c6ba5882,

title = "Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance",

author = "G. Larrieu and Emmanuel Dubois and D.A. Yarekha and N. Breil and Nicolas Reckinger and Xiaohui Tang and J. Ratajczak and A. Laszcz",

year = "2008",

language = "English",

note = "European Materials Research Society - Spring Meeting ; Conference date: 26-05-2008 Through 30-05-2008",

}

TY - CONF

T1 - Impact of channel doping on Schottky barrier height and investigation on p-SBMOSFETs performance

AU - Larrieu, G.

AU - Dubois, Emmanuel

AU - Yarekha, D.A.

AU - Breil, N.

AU - Reckinger, Nicolas

AU - Tang, Xiaohui

AU - Ratajczak, J.

AU - Laszcz, A.

PY - 2008

Y1 - 2008

M3 - Abstract

T2 - European Materials Research Society - Spring Meeting

Y2 - 26 May 2008 through 30 May 2008

ER -