Higher-indexed Moiré patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy

Trung T. Pham; Péter Vancsó; Márton Szendrő; Krisztián Palotás; Roshan Castelino; Mehdi Bouatou; Cyril Chacon; Luc Henrard; Jérôme Lagoute; Robert Sporken

doi:10.1038/s41699-022-00321-9

Higher-indexed Moiré patterns and surface states of MoTe₂/graphene heterostructure grown by molecular beam epitaxy

Trung T. Pham, Péter Vancsó, Márton Szendrő, Krisztián Palotás, Roshan Castelino, Mehdi Bouatou, Cyril Chacon, Luc Henrard, Jérôme Lagoute, Robert Sporken

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

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Résumé

Stabilization of the 2H phase of MoTe₂ during molecular beam epitaxy (MBE) growth on graphene terminated 6H-SiC(0001) is highly desirable in order to take advantage of its promising properties in electronic applications. By properly adjusting the conditions, direct growth of the highly crystalline 2H phase of MoTe₂ has been achieved. In such van der Waals heterostructure, the atomically-clean interface between graphene and MoTe₂ permits the electronic coupling between the adjacent layers and the emergence of a high variety of Moiré patterns. In this paper, we investigate a single layer of 2H-MoTe₂ grown on graphene by MBE and we present scanning tunneling microscopy (STM) investigations combined with density functional theory (DFT) calculations and simulations of STM images. Our results show that the STM images of the MoTe₂/graphene heterostructure surprisingly amplify the otherwise weak Moiré potential modulations leading to the appearance of unique higher-indexed Moiré patterns. These patterns are unusually rich with many Fourier-overtones and show a remarkable variety of different applied bias voltages, revealing the complex electronic features of the heterostructure.

langue originale	Anglais
Numéro d'article	48
journal	npj 2D Materials and Applications
Volume	6
Numéro de publication	1
Les DOIs	https://doi.org/10.1038/s41699-022-00321-9
Etat de la publication	Publié - déc. 2022

Financement

We would like to thank Etienne Gennart and Jean-Pierre Van Roy for their technical support. Trung T. Pham would like to thank ARES CCD for financial support and Roshan Castelino acknowledges a scholarship from the Jesuit province of l\u2019EOF. The work was supported by the European H2020 GrapheneCore3 Project No. 881603, Graphene Flagship, and the \u00C9lvonal grant KKP 138144. P.V. and K.P. acknowledge the support of the Janos Bolyai Research Scholarship of the Hungarian Academy of Sciences. M.S., K.P., and P.V. acknowledge the support from the National Research, Development and Innovation Office (NKFIH) in Hungary, through Grants No. K-134258, FK-124100, and K-132869. This research used resources of the \u201CPlateforme Technologique de Calcul Intensif (PTCI)\u201D located at the University of Namur, Belgium which is supported by the F.R.S.-FNRS under the convention No. 2.5020.11. The PTCI is member of the \u201CConsortium des \u00C9quipements de Calcul Intensif (C\u00C9CI)\u201D. M.B., C.C., and J.L. acknowledge the European Union for funding (Grant Agreement No. 766726).

Bailleurs de fonds	Numéro du bailleur de fonds
ARES CCD
European commission
Magyar Tudományos Akadémia
Horizon 2020 Framework Programme	881603, KKP 138144, 766726
Nemzeti Kutatási Fejlesztési és Innovációs Hivatal	K-134258, K-132869, FK-124100
Fonds De La Recherche Scientifique - FNRS	2.5020.11

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10.1038/s41699-022-00321-9

TrungT_article_2022Version finale publiée, 2,98 MB

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Renouvellement d’équipements pour le Consortium des Equipements de Calcul Intensif (CECI)
Bontempi, G. (Responsable du Projet), CHAMPAGNE, B. (CoPI), Geuzaine , C. (CoPI), RIGNANESE, G. M. (CoPI) & Lazzaroni, R. (CoPI)
1/01/22 → 31/12/23
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Sporken, R. (!!Manager)
Plateforme technologique Morphologie, imagerie
Equipement/installations: Equipement
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Contient cette citation

@article{f4a171bca23c418e86677791e34735b8,

title = "Higher-indexed Moir{\'e} patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy",

abstract = "Stabilization of the 2H phase of MoTe2 during molecular beam epitaxy (MBE) growth on graphene terminated 6H-SiC(0001) is highly desirable in order to take advantage of its promising properties in electronic applications. By properly adjusting the conditions, direct growth of the highly crystalline 2H phase of MoTe2 has been achieved. In such van der Waals heterostructure, the atomically-clean interface between graphene and MoTe2 permits the electronic coupling between the adjacent layers and the emergence of a high variety of Moir{\'e} patterns. In this paper, we investigate a single layer of 2H-MoTe2 grown on graphene by MBE and we present scanning tunneling microscopy (STM) investigations combined with density functional theory (DFT) calculations and simulations of STM images. Our results show that the STM images of the MoTe2/graphene heterostructure surprisingly amplify the otherwise weak Moir{\'e} potential modulations leading to the appearance of unique higher-indexed Moir{\'e} patterns. These patterns are unusually rich with many Fourier-overtones and show a remarkable variety of different applied bias voltages, revealing the complex electronic features of the heterostructure.",

author = "Pham, \{Trung T.\} and P{\'e}ter Vancs{\'o} and M{\'a}rton Szendr{\H o} and Kriszti{\'a}n Palot{\'a}s and Roshan Castelino and Mehdi Bouatou and Cyril Chacon and Luc Henrard and J{\'e}r{\^o}me Lagoute and Robert Sporken",

note = "Funding Information: We would like to thank Etienne Gennart and Jean-Pierre Van Roy for their technical support. Trung T. Pham would like to thank ARES CCD for financial support and Roshan Castelino acknowledges a scholarship from the Jesuit province of l{\textquoteright}EOF. The work was supported by the European H2020 GrapheneCore3 Project No. 881603, Graphene Flagship, and the {\'E}lvonal grant KKP 138144. P.V. and K.P. acknowledge the support of the Janos Bolyai Research Scholarship of the Hungarian Academy of Sciences. M.S., K.P., and P.V. acknowledge the support from the National Research, Development and Innovation Office (NKFIH) in Hungary, through Grants No. K-134258, FK-124100, and K-132869. This research used resources of the “Plateforme Technologique de Calcul Intensif (PTCI)” located at the University of Namur, Belgium which is supported by the F.R.S.-FNRS under the convention No. 2.5020.11. The PTCI is member of the “Consortium des {\'E}quipements de Calcul Intensif (C{\'E}CI)”. M.B., C.C., and J.L. acknowledge the European Union for funding (Grant Agreement No. 766726). Publisher Copyright: {\textcopyright} 2022, The Author(s).",

year = "2022",

month = dec,

doi = "10.1038/s41699-022-00321-9",

language = "English",

volume = "6",

journal = "npj 2D Materials and Applications",

issn = "2397-7132",

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T1 - Higher-indexed Moiré patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy

AU - Pham, Trung T.

AU - Vancsó, Péter

AU - Szendrő, Márton

AU - Palotás, Krisztián

AU - Castelino, Roshan

AU - Bouatou, Mehdi

AU - Chacon, Cyril

AU - Henrard, Luc

AU - Lagoute, Jérôme

AU - Sporken, Robert

N1 - Funding Information: We would like to thank Etienne Gennart and Jean-Pierre Van Roy for their technical support. Trung T. Pham would like to thank ARES CCD for financial support and Roshan Castelino acknowledges a scholarship from the Jesuit province of l’EOF. The work was supported by the European H2020 GrapheneCore3 Project No. 881603, Graphene Flagship, and the Élvonal grant KKP 138144. P.V. and K.P. acknowledge the support of the Janos Bolyai Research Scholarship of the Hungarian Academy of Sciences. M.S., K.P., and P.V. acknowledge the support from the National Research, Development and Innovation Office (NKFIH) in Hungary, through Grants No. K-134258, FK-124100, and K-132869. This research used resources of the “Plateforme Technologique de Calcul Intensif (PTCI)” located at the University of Namur, Belgium which is supported by the F.R.S.-FNRS under the convention No. 2.5020.11. The PTCI is member of the “Consortium des Équipements de Calcul Intensif (CÉCI)”. M.B., C.C., and J.L. acknowledge the European Union for funding (Grant Agreement No. 766726). Publisher Copyright: © 2022, The Author(s).

PY - 2022/12

Y1 - 2022/12

N2 - Stabilization of the 2H phase of MoTe2 during molecular beam epitaxy (MBE) growth on graphene terminated 6H-SiC(0001) is highly desirable in order to take advantage of its promising properties in electronic applications. By properly adjusting the conditions, direct growth of the highly crystalline 2H phase of MoTe2 has been achieved. In such van der Waals heterostructure, the atomically-clean interface between graphene and MoTe2 permits the electronic coupling between the adjacent layers and the emergence of a high variety of Moiré patterns. In this paper, we investigate a single layer of 2H-MoTe2 grown on graphene by MBE and we present scanning tunneling microscopy (STM) investigations combined with density functional theory (DFT) calculations and simulations of STM images. Our results show that the STM images of the MoTe2/graphene heterostructure surprisingly amplify the otherwise weak Moiré potential modulations leading to the appearance of unique higher-indexed Moiré patterns. These patterns are unusually rich with many Fourier-overtones and show a remarkable variety of different applied bias voltages, revealing the complex electronic features of the heterostructure.

AB - Stabilization of the 2H phase of MoTe2 during molecular beam epitaxy (MBE) growth on graphene terminated 6H-SiC(0001) is highly desirable in order to take advantage of its promising properties in electronic applications. By properly adjusting the conditions, direct growth of the highly crystalline 2H phase of MoTe2 has been achieved. In such van der Waals heterostructure, the atomically-clean interface between graphene and MoTe2 permits the electronic coupling between the adjacent layers and the emergence of a high variety of Moiré patterns. In this paper, we investigate a single layer of 2H-MoTe2 grown on graphene by MBE and we present scanning tunneling microscopy (STM) investigations combined with density functional theory (DFT) calculations and simulations of STM images. Our results show that the STM images of the MoTe2/graphene heterostructure surprisingly amplify the otherwise weak Moiré potential modulations leading to the appearance of unique higher-indexed Moiré patterns. These patterns are unusually rich with many Fourier-overtones and show a remarkable variety of different applied bias voltages, revealing the complex electronic features of the heterostructure.

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DO - 10.1038/s41699-022-00321-9

M3 - Article

AN - SCOPUS:85134386950

SN - 2397-7132

VL - 6

JO - npj 2D Materials and Applications

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ER -

Higher-indexed Moiré patterns and surface states of MoTe2/graphene heterostructure grown by molecular beam epitaxy

Résumé

Financement

Accès au document

Autres fichiers et liens

Empreinte digitale

Projets

Renouvellement d’équipements pour le Consortium des Equipements de Calcul Intensif (CECI)

Équipement

Microscopie à effet tunnel

Plateforme Technologique Calcul Intensif

Contient cette citation

Higher-indexed Moiré patterns and surface states of MoTe₂/graphene heterostructure grown by molecular beam epitaxy