Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

X. J. Wang; Y. B. Hou; Y. Chang; C. R. Becker; R. F. Klie; T. W. Kang; R. Sporken; S. Sivananthan

doi:10.1016/j.jcrysgro.2009.01.140

Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

X. J. Wang, Y. B. Hou, Y. Chang, C. R. Becker, R. F. Klie, T. W. Kang, R. Sporken, S. Sivananthan

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.

langue originale	Anglais
Pages (de - à)	2359-2362
Nombre de pages	4
journal	Journal of Crystal Growth
Volume	311
Numéro de publication	8
Les DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.140
Etat de la publication	Publié - 1 avr. 2009

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@article{0dd98dfcab75455aae88b0d3c3d47913,

title = "Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy",

abstract = "Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.",

keywords = "A1. Dislocations, A2. Molecular beam epitaxy, B2. GaAs, B2. PbSe",

author = "Wang, {X. J.} and Hou, {Y. B.} and Y. Chang and Becker, {C. R.} and Klie, {R. F.} and Kang, {T. W.} and R. Sporken and S. Sivananthan",

year = "2009",

month = apr,

day = "1",

doi = "10.1016/j.jcrysgro.2009.01.140",

language = "English",

volume = "311",

pages = "2359--2362",

journal = "Journal of Crystal Growth",

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number = "8",

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TY - JOUR

T1 - Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

AU - Wang, X. J.

AU - Hou, Y. B.

AU - Chang, Y.

AU - Becker, C. R.

AU - Klie, R. F.

AU - Kang, T. W.

AU - Sporken, R.

AU - Sivananthan, S.

PY - 2009/4/1

Y1 - 2009/4/1

N2 - Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.

AB - Heteroepitaxy of single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B has been achieved using molecular beam epitaxy. Two-dimensional growth and smooth surface morphology are indicated by reflection high-energy electron diffraction (RHEED) patterns. X-ray diffraction spectra of the resulting single-crystal PbSe on GaAs(1 0 0) and GaAs(2 1 1)B demonstrated that the orientation of PbSe is (1 0 0) on GaAs(1 0 0), while on GaAs(2 1 1)B it is close to (5 1 1). Cross-sectional transmission electron microscopy revealed the presence of an abrupt interface between PbSe and GaAs and good crystallinity of the PbSe film for both orientations. Selective-area diffraction pattern confirmed the epitaxial relationship between PbSe and GaAs.

KW - A1. Dislocations

KW - A2. Molecular beam epitaxy

KW - B2. GaAs

KW - B2. PbSe

UR - http://www.scopus.com/inward/record.url?scp=65249118317&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.01.140

DO - 10.1016/j.jcrysgro.2009.01.140

M3 - Article

AN - SCOPUS:65249118317

SN - 0022-0248

VL - 311

SP - 2359

EP - 2362

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy

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