Grain boundaries in graphene on SiC(0001¯) substrate

Yann Tison, Jérôme Lagoute, Vincent Repain, Cyril Chacon, Yann Girard, Frédéric Joucken, Robert Sporken, Fernando Gargiulo, Oleg V. Yazyev, Sylvie Rousset

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs


    Grain boundaries in epitaxial graphene on the SiC(0001¯) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields of constituent dislocations. The ensemble of observations determines the critical misorientation angle of buckling transition θc = 19 ± 2°. Periodic structures are found among the flat large-angle grain boundaries. In particular, the observed θ = 33 ± 2° highly ordered grain boundary is assigned to the previously proposed lowest formation energy structural motif composed of a continuous chain of edge-sharing alternating pentagons and heptagons. This periodic grain boundary defect is predicted to exhibit strong valley filtering of charge carriers thus promising the practical realization of all-electric valleytronic devices.

    langue originaleAnglais
    Pages (de - à)6382-6386
    Nombre de pages5
    journalNano Letters
    Numéro de publication11
    Date de mise en ligne précoce20 oct. 2014
    Les DOIs
    Etat de la publicationPublié - 12 nov. 2014

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