The long-wavelength InGaAs surface phonons Fuchs-Kliewer (FK) have been measured using Height Resolution Electron Energy Loss Spectroscopy (HREELS). The InGaAs surface was deposited by Chemical Vapour on undoped InP buffer layer deposited on Fe-doped (001) InP substrate from Metal organic precursors (MOCVD). The surface was analysed in ultrahigh vacuum (UHV) with low energy electron diffraction (LEED). The InGa As HREELS experimental spectra are compared with those of its host lattice, GaAs and InAs, obtained from semiclassical dielectric theory calculations.
|titre||AIP Conference Proceedings|
|Nombre de pages||5|
|Etat de la publication||Publié - 1 janv. 2012|