Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy

Ning Liu, Mahendar Kumbham, Isabel Pita, Yina Guo, Paolo Bianchini, Alberto Diaspro, Syed A M Tofail, André Peremans, Christophe Silien

Résultats de recherche: Recherche - Revue par des pairsArticle

Résumé

Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.

langueAnglais
Pages478-485
Nombre de pages8
journalACS Photonics
Volume3
Numéro3
Les DOIs
étatPublié - 16 mars 2016

Empreinte digitale

Microscopic examination
Diffraction
Semiconductor materials
Imaging techniques
far fields
microscopy
Semiconductors
Microscopy
Labels
diffraction
Nanobelts
Wavefronts
Absorption spectroscopy
Pumps
Chemical analysis
imaging techniques
absorption spectroscopy
spatial resolution
nonlinearity
pumps

mots-clés

    Citer ceci

    Liu, Ning ; Kumbham, Mahendar ; Pita, Isabel ; Guo, Yina ; Bianchini, Paolo ; Diaspro, Alberto ; Tofail, Syed A M ; Peremans, André ; Silien, Christophe. / Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy. Dans: ACS Photonics. 2016 ; Vol 3, Numéro 3. p. 478-485
    @article{9b8aaefc750746eb9570800e2a8676c7,
    title = "Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy",
    abstract = "Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.",
    keywords = "bleaching, cadmium selenide, induced absorption, label-free, microspectroscopy, nanowire, pump''probe, super-resolution",
    author = "Ning Liu and Mahendar Kumbham and Isabel Pita and Yina Guo and Paolo Bianchini and Alberto Diaspro and Tofail, {Syed A M} and André Peremans and Christophe Silien",
    year = "2016",
    month = "3",
    doi = "10.1021/acsphotonics.5b00716",
    volume = "3",
    pages = "478--485",
    journal = "ACS Photonics",
    issn = "2330-4022",
    publisher = "American Chemical Society",
    number = "3",

    }

    Liu, N, Kumbham, M, Pita, I, Guo, Y, Bianchini, P, Diaspro, A, Tofail, SAM, Peremans, A & Silien, C 2016, 'Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy' ACS Photonics, VOL 3, Numéro 3, p. 478-485. DOI: 10.1021/acsphotonics.5b00716

    Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy. / Liu, Ning; Kumbham, Mahendar; Pita, Isabel; Guo, Yina; Bianchini, Paolo; Diaspro, Alberto; Tofail, Syed A M; Peremans, André; Silien, Christophe.

    Dans: ACS Photonics, Vol 3, Numéro 3, 16.03.2016, p. 478-485.

    Résultats de recherche: Recherche - Revue par des pairsArticle

    TY - JOUR

    T1 - Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy

    AU - Liu,Ning

    AU - Kumbham,Mahendar

    AU - Pita,Isabel

    AU - Guo,Yina

    AU - Bianchini,Paolo

    AU - Diaspro,Alberto

    AU - Tofail,Syed A M

    AU - Peremans,André

    AU - Silien,Christophe

    PY - 2016/3/16

    Y1 - 2016/3/16

    N2 - Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.

    AB - Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.

    KW - bleaching

    KW - cadmium selenide

    KW - induced absorption

    KW - label-free

    KW - microspectroscopy

    KW - nanowire

    KW - pump''probe

    KW - super-resolution

    UR - http://www.scopus.com/inward/record.url?scp=84962218181&partnerID=8YFLogxK

    U2 - 10.1021/acsphotonics.5b00716

    DO - 10.1021/acsphotonics.5b00716

    M3 - Article

    VL - 3

    SP - 478

    EP - 485

    JO - ACS Photonics

    T2 - ACS Photonics

    JF - ACS Photonics

    SN - 2330-4022

    IS - 3

    ER -

    Liu N, Kumbham M, Pita I, Guo Y, Bianchini P, Diaspro A et al. Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy. ACS Photonics. 2016 mars 16;3(3):478-485. Disponible à, DOI: 10.1021/acsphotonics.5b00716