Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy

Ning Liu, Mahendar Kumbham, Isabel Pita, Yina Guo, Paolo Bianchini, Alberto Diaspro, Syed A M Tofail, André Peremans, Christophe Silien

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

Label-free absorption spectroscopies are frontline techniques to reveal the spectral fingerprint, composition and environment of materials and are applicable to a wide range of samples. In an effort to improve the spatial resolution of far-field absorption microscopy, which is limited by the diffraction of light, an imaging technique based on transient absorption saturation has recently been developed. Here we report a far-field transient absorption microscopy that does not require the sample to exhibit saturable absorption to break the diffraction barrier. By alternating the wavefront of the pump beams and exploiting a nonlinearity in the transient absorption intrinsic to semiconductors, we demonstrate imaging, beyond the diffraction limit, in CdSe nanobelts. This differential technique is applied for label-free super-resolution absorption microspectroscopy.

langue originaleAnglais
Pages (de - à)478-485
Nombre de pages8
journalACS Photonics
Volume3
Numéro de publication3
Les DOIs
étatPublié - 16 mars 2016

Empreinte digitale

Semiconductors
far fields
Microscopy
Microscopic examination
Diffraction
Semiconductor materials
microscopy
Imaging techniques
Labels
Nanobelts
Wavefronts
Absorption spectroscopy
diffraction
Pumps
Chemical analysis
imaging techniques
Dermatoglyphics
absorption spectroscopy
spatial resolution
nonlinearity

Citer ceci

Liu, Ning ; Kumbham, Mahendar ; Pita, Isabel ; Guo, Yina ; Bianchini, Paolo ; Diaspro, Alberto ; Tofail, Syed A M ; Peremans, André ; Silien, Christophe. / Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy. Dans: ACS Photonics. 2016 ; Vol 3, Numéro 3. p. 478-485.
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Far-Field Subdiffraction Imaging of Semiconductors Using Nonlinear Transient Absorption Differential Microscopy. / Liu, Ning; Kumbham, Mahendar; Pita, Isabel; Guo, Yina; Bianchini, Paolo; Diaspro, Alberto; Tofail, Syed A M; Peremans, André; Silien, Christophe.

Dans: ACS Photonics, Vol 3, Numéro 3, 16.03.2016, p. 478-485.

Résultats de recherche: Contribution à un journal/une revueArticle

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AU - Diaspro, Alberto

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