Fabrication of SOI nano devices

X. Tang, Nicolas Reckinger, V. Bayot

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Résumé

Some current fabrication technologies of SOI nano devices are reviewed in
this paper. By means of arsenic-assisted etching and oxidation effects, we have
fabricated several SOI nano devices: single-electron transistor, nano floating
gate memory device and cell, Ω-gate elevated source/drain MOSFET. The
application of this technique for fabricating a Schottky barrier MOSFET is
also presented.
langue originaleAnglais
titreScience and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment
étatPublié - 2005

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Tang, X., Reckinger, N., & Bayot, V. (2005). Fabrication of SOI nano devices. Dans Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment