Fabrication of SOI nano devices

X. Tang; Nicolas Reckinger; V. Bayot

Fabrication of SOI nano devices

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférence › Article dans les actes d'une conférence/un colloque

Résumé

Some current fabrication technologies of SOI nano devices are reviewed in
this paper. By means of arsenic-assisted etching and oxidation effects, we have
fabricated several SOI nano devices: single-electron transistor, nano floating
gate memory device and cell, Ω-gate elevated source/drain MOSFET. The
application of this technique for fabricating a Schottky barrier MOSFET is
also presented.

langue originale	Anglais
titre	Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment
Etat de la publication	Publié - 2005

Contient cette citation

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title = "Fabrication of SOI nano devices",

abstract = "Some current fabrication technologies of SOI nano devices are reviewed inthis paper. By means of arsenic-assisted etching and oxidation effects, we havefabricated several SOI nano devices: single-electron transistor, nano floatinggate memory device and cell, Ω-gate elevated source/drain MOSFET. Theapplication of this technique for fabricating a Schottky barrier MOSFET isalso presented.",

author = "X. Tang and Nicolas Reckinger and V. Bayot",

year = "2005",

language = "English",

booktitle = "Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment",

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T1 - Fabrication of SOI nano devices

AU - Tang, X.

AU - Reckinger, Nicolas

AU - Bayot, V.

PY - 2005

Y1 - 2005

N2 - Some current fabrication technologies of SOI nano devices are reviewed inthis paper. By means of arsenic-assisted etching and oxidation effects, we havefabricated several SOI nano devices: single-electron transistor, nano floatinggate memory device and cell, Ω-gate elevated source/drain MOSFET. Theapplication of this technique for fabricating a Schottky barrier MOSFET isalso presented.

AB - Some current fabrication technologies of SOI nano devices are reviewed inthis paper. By means of arsenic-assisted etching and oxidation effects, we havefabricated several SOI nano devices: single-electron transistor, nano floatinggate memory device and cell, Ω-gate elevated source/drain MOSFET. Theapplication of this technique for fabricating a Schottky barrier MOSFET isalso presented.

M3 - Conference contribution

BT - Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment

ER -