Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

X. Tang; N. Reckinger; V. Bayot; C. Krzeminski; E. Dubois; A. Villaret; D.-C. Bensahel

doi:10.1109/TNANO.2006.883481

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

X. Tang, N. Reckinger, V. Bayot, C. Krzeminski, E. Dubois, A. Villaret, D.-C. Bensahel

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

Résumé

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

langue originale	Anglais
Pages (de - à)	649-655
Nombre de pages	7
journal	IEEE Transactions on Nanotechnology
Volume	5
Numéro de publication	6
Les DOIs	https://doi.org/10.1109/TNANO.2006.883481
Etat de la publication	Publié - 1 nov. 2006

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10.1109/TNANO.2006.883481

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abstract = "Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.",

author = "X. Tang and N. Reckinger and V. Bayot and C. Krzeminski and E. Dubois and A. Villaret and D.-C. Bensahel",

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AU - Dubois, E.

AU - Villaret, A.

AU - Bensahel, D.-C.

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AB - Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory circuit, this paper investigates process repeatability, device uniformity in single-dot memory arrays, device scalability, and process transferability to an industrial application.

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Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

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