Fabrication and nuclear analysis of isotopic 14N and 15N ion implanted silicon standards

Mourad Yedji; Martin Bolduc; Gilles Genard; Guy Terwagne; Guy G. Ross

doi:10.1016/j.nimb.2008.03.212

Fabrication and nuclear analysis of isotopic ¹⁴N and ¹⁵N ion implanted silicon standards

Mourad Yedji, Martin Bolduc, Gilles Genard, Guy Terwagne, Guy G. Ross

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

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Résumé

The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV 14N2+ and 15N2+ ions were implanted at 400°C up to ~60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using Resonant Nuclear Reaction Analysis. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under 200 nA beam current of He+ ions or under 250 nA beam current of H+ ions, giving strong evidence that isotopic nitrogen standards can be achieved.

langue originale	Anglais
Pages (de - à)	2060-2064
Nombre de pages	5
journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	266
Numéro de publication	9
Les DOIs	https://doi.org/10.1016/j.nimb.2008.03.212
Etat de la publication	Publié - 2008

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10.1016/j.nimb.2008.03.212

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Synthèse, Irradiation et Analyse de Matériaux (SIAM) (2016 - ...)
Louette, P. (!!Manager), Colaux, J. (!!Manager), Felten, A. (!!Manager), Tabarrant, T. (!!Operator), COME, F. (!!Operator) & Debarsy, P.-L. (!!Manager)
Plateforme technologique Synthese, irradiation et analyse des materiaux
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Contient cette citation

@article{e4c43d3710074174af7619221368f915,

title = "Fabrication and nuclear analysis of isotopic 14N and 15N ion implanted silicon standards",

abstract = "The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV 14N2+ and 15N2+ ions were implanted at 400°C up to ~60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using Resonant Nuclear Reaction Analysis. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under 200 nA beam current of He+ ions or under 250 nA beam current of H+ ions, giving strong evidence that isotopic nitrogen standards can be achieved.",

keywords = "Ion implantation; Resonant Nuclear Reaction Analysis; Isotopic standards; Silicon nitrides; Desorption",

author = "Mourad Yedji and Martin Bolduc and Gilles Genard and Guy Terwagne and Ross, {Guy G.}",

note = "Publication code : RES. ACAD.",

year = "2008",

doi = "10.1016/j.nimb.2008.03.212",

language = "English",

volume = "266",

pages = "2060--2064",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "1872-9584",

publisher = "Elsevier",

number = "9",

}

Fabrication and nuclear analysis of isotopic ¹⁴N and ¹⁵N ion implanted silicon standards. / Yedji, Mourad; Bolduc, Martin; Genard, Gilles et al.
Dans: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol 266, Numéro 9, 2008, p. 2060-2064.

Résultats de recherche: Contribution à un journal/une revue › Article › Revue par des pairs

TY - JOUR

T1 - Fabrication and nuclear analysis of isotopic 14N and 15N ion implanted silicon standards

AU - Yedji, Mourad

AU - Bolduc, Martin

AU - Genard, Gilles

AU - Terwagne, Guy

AU - Ross, Guy G.

N1 - Publication code : RES. ACAD.

PY - 2008

Y1 - 2008

N2 - The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV 14N2+ and 15N2+ ions were implanted at 400°C up to ~60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using Resonant Nuclear Reaction Analysis. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under 200 nA beam current of He+ ions or under 250 nA beam current of H+ ions, giving strong evidence that isotopic nitrogen standards can be achieved.

AB - The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV 14N2+ and 15N2+ ions were implanted at 400°C up to ~60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using Resonant Nuclear Reaction Analysis. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under 200 nA beam current of He+ ions or under 250 nA beam current of H+ ions, giving strong evidence that isotopic nitrogen standards can be achieved.

KW - Ion implantation; Resonant Nuclear Reaction Analysis; Isotopic standards; Silicon nitrides; Desorption

U2 - 10.1016/j.nimb.2008.03.212

DO - 10.1016/j.nimb.2008.03.212

M3 - Article

SN - 1872-9584

VL - 266

SP - 2060

EP - 2064

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 9

ER -

Fabrication and nuclear analysis of isotopic 14N and 15N ion implanted silicon standards

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Contient cette citation

Fabrication and nuclear analysis of isotopic ¹⁴N and ¹⁵N ion implanted silicon standards