Fabrication and nuclear analysis of isotopic 14N and 15N ion implanted silicon standards

Mourad Yedji, Martin Bolduc, Gilles Genard, Guy Terwagne, Guy G. Ross

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    Résumé

    The fabrication of reliable isotopic nitrogen standards is achieved in Si through 14N and 15N ion implantation. 60 keV 14N2+ and 15N2+ ions were implanted at 400°C up to ~60% peak atomic concentration, yielding nitrogen-saturated silicon layers as measured using Resonant Nuclear Reaction Analysis. The nitrogen standards are validated by measurements of stability under ion irradiation. No significant desorption of nitrogen is observed either under 200 nA beam current of He+ ions or under 250 nA beam current of H+ ions, giving strong evidence that isotopic nitrogen standards can be achieved.
    langue originaleAnglais
    Pages (de - à)2060-2064
    Nombre de pages5
    journalNuclear instruments and methods in physics research B
    Volume266
    Numéro de publication9
    Etat de la publicationPublié - 2008

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