Résumé
In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils and transferred over pre-patterned back-gated devices on Si/SiO2 substrate. Scanning electron microscopy, Raman spectroscopy and Hall effect measurement were used for characterizing graphene quality before and after the transfer. It was found that monolayer graphene with a low defect density and hole mobility up to 3180cm2/Vs at n=1.3·1012 cm-2, could be obtained. For device characterization, devices with different gate length were discussed. We report an intrinsic current gain cut-off frequency (ft ) of 15.5 GHz and maximum oscillation frequency of 12 GHz, deduced from the S-parameters measurements for device with gate length of 100 nm. This study demonstrates the potential of CVD-grown graphene for high speed electronics in combination with a technological process compatible with arbitrary substrates.
langue originale | Anglais |
---|---|
titre | European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference |
Editeur | Institute of Electrical and Electronics Engineers Inc. |
Pages | 367-370 |
Nombre de pages | 4 |
ISBN (Electronique) | 9782874870354 |
Les DOIs | |
Etat de la publication | Publié - 15 déc. 2014 |
Modification externe | Oui |
Evénement | 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italie Durée: 6 oct. 2014 → 9 oct. 2014 |
Une conférence
Une conférence | 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 |
---|---|
Pays/Territoire | Italie |
La ville | Rome |
période | 6/10/14 → 9/10/14 |