Evolution of nanoripples on silicon by gas cluster-ion irradiation

Omar Lozano Garcia, Q. Y. Chen, B. P. Tilakaratne, H. W. Seo, X. M. Wang, P. V. Wadekar, P. V. Chinta, L. W. Tu, N. J. Ho, D. Wijesundera, W. K. Chu

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    Si wafers of (100), (110) and (111) orientations were bombarded by gas cluster ion beam (GCIB) of 3000 Ar-atoms/cluster on average at a series of angles. Similar surface morphology ripples developed in different nanoscales. A simple scaling functional satisfactorily describe the roughness and wavelength of the ripple patterns as a function of dosage and angle of incidence. The ripples are formed orthogonal to the incident cluster-ions at large off-normal angles. An ellipsoidal pattern was created by two consecutive irradiations incident in mutually orthogonal directions with unequal exposure times between each irradiation, from 7:1 to 10:1, beyond which the original ripple imprints would be over-written. This work was inspired by use of the ripples to seed growth of controlled nanostructures without patterning by lithography or predeposition of catalysts.

    langue originaleAnglais
    Numéro d'article062107
    journalRSC Advances
    Volume3
    Numéro de publication6
    Les DOIs
    Etat de la publicationPublié - 28 août 2013

    Empreinte digitale

    Examiner les sujets de recherche de « Evolution of nanoripples on silicon by gas cluster-ion irradiation ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation