Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode

Guoli Li, Nicolas André, Benjamin Huet, Thibault Delhaye, Nicolas Reckinger, Laurent A. Francis, Lei Liao, Jean Pierre Raskin, Yun Zeng, Denis Flandre

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    We present an ultra-thin lateral SOI PIN photodiode with transferred monolayer graphene as the transparent gate, to provide enhanced ultraviolet (UV) performance and mechanical flexibility beyond standard Si-based devices. The device dark current shows intact characteristics after the post-CMOS thinning and graphene transfer processing steps. The device responsivity presents high potential in UV and visible wavelength detections (i.e. within the 200-900 nm range) under monochromatic light illumination. A maximum responsivity of 0.18 A W-1 has been experimentally achieved at 390 nm wavelength and validated by simulation, for a diode with intrinsic length L i of 20 μm. Additionally, the ∼5 μm-thick device chip with direct board assembly paves the way towards the development of hybrid flexible electronics.

    langue originaleAnglais
    Numéro d'article245101
    journalJournal of Physics D: Applied Physics
    Volume52
    Numéro de publication24
    Les DOIs
    Etat de la publicationPublié - 9 avr. 2019

    Empreinte digitale Examiner les sujets de recherche de « Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode ». Ensemble, ils forment une empreinte digitale unique.

    Contient cette citation