Electronic States and Band Lineups in c-Si(100)/a-Si1-xCx Heterojunctions

T. M. Brown, Carla Bittencourt Papaleo Montes, M. Sebastiani, F. Evangelisti

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    Résumé

    Heterostructures formed by depositing in situ amorphous hydrogenated silicon-carbon alloys on Si(100) substrates were characterized by photoelectric-yield spectroscopy, UPS, and XPS. It is shown that both substrate and overlayer valence-band tops can be identified on the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence-band discontinuity varying from 0.44 eV to 1.00 eV for carbon content ranging from 0 to 50%. The present data can be used as a test for the lineup theories and strongly support the interface dipole models.
    langue originaleAnglais
    Pages (de - à)9904
    journalPhysical review. B, Condensed matter
    Volume55
    Numéro de publication15
    Les DOIs
    Etat de la publicationPublié - 1997

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