TY - JOUR
T1 - Electronic States and Band Lineups in c-Si(100)/a-Si1-xCx Heterojunctions
AU - Brown, T. M.
AU - Bittencourt Papaleo Montes, Carla
AU - Sebastiani, M.
AU - Evangelisti, F.
PY - 1997
Y1 - 1997
N2 - Heterostructures formed by depositing in situ amorphous hydrogenated silicon-carbon alloys on Si(100) substrates were characterized by photoelectric-yield spectroscopy, UPS, and XPS. It is shown that both substrate and overlayer valence-band tops can be identified on the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence-band discontinuity varying from 0.44 eV to 1.00 eV for carbon content ranging from 0 to 50%. The present data can be used as a test for the lineup theories and strongly support the interface dipole models.
AB - Heterostructures formed by depositing in situ amorphous hydrogenated silicon-carbon alloys on Si(100) substrates were characterized by photoelectric-yield spectroscopy, UPS, and XPS. It is shown that both substrate and overlayer valence-band tops can be identified on the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence-band discontinuity varying from 0.44 eV to 1.00 eV for carbon content ranging from 0 to 50%. The present data can be used as a test for the lineup theories and strongly support the interface dipole models.
U2 - 10.1103/PhysRevB.55.9904
DO - 10.1103/PhysRevB.55.9904
M3 - Article
SN - 0163-1829
VL - 55
SP - 9904
JO - Physical review. B, Condensed matter
JF - Physical review. B, Condensed matter
IS - 15
ER -