Electronic interaction between nitrogen atoms in doped graphene

Yann Tison, Jérôme Lagoute, Vincent Repain, Cyril Chacon, Yann Girard, Frédéric Joucken, Dimpy Sharma, Sylvie Rousset, Luc Henrard, Hakim Amara, Ahmed Ghedjatti, François Ducastelle

Résultats de recherche: Contribution à un journal/une revueArticle

Résumé

Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

langue originaleAnglais
Pages (de - à)670-678
Nombre de pages9
journalACS nano
Volume9
Numéro de publication1
Les DOIs
étatPublié - 2015

Empreinte digitale

Graphite
nitrogen atoms
Graphene
graphene
Nitrogen
Doping (additives)
Atoms
nitrogen
electronics
interactions
Electronic properties
Electronic structure
electronic structure
configurations
point defects
Scanning tunneling microscopy
atoms
Point defects
scanning tunneling microscopy
Fermi level

Citer ceci

Tison, Y., Lagoute, J., Repain, V., Chacon, C., Girard, Y., Joucken, F., ... Ducastelle, F. (2015). Electronic interaction between nitrogen atoms in doped graphene. ACS nano, 9(1), 670-678. https://doi.org/10.1021/nn506074u
Tison, Yann ; Lagoute, Jérôme ; Repain, Vincent ; Chacon, Cyril ; Girard, Yann ; Joucken, Frédéric ; Sharma, Dimpy ; Rousset, Sylvie ; Henrard, Luc ; Amara, Hakim ; Ghedjatti, Ahmed ; Ducastelle, François. / Electronic interaction between nitrogen atoms in doped graphene. Dans: ACS nano. 2015 ; Vol 9, Numéro 1. p. 670-678.
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Tison, Y, Lagoute, J, Repain, V, Chacon, C, Girard, Y, Joucken, F, Sharma, D, Rousset, S, Henrard, L, Amara, H, Ghedjatti, A & Ducastelle, F 2015, 'Electronic interaction between nitrogen atoms in doped graphene', ACS nano, VOL. 9, Numéro 1, p. 670-678. https://doi.org/10.1021/nn506074u

Electronic interaction between nitrogen atoms in doped graphene. / Tison, Yann; Lagoute, Jérôme; Repain, Vincent; Chacon, Cyril; Girard, Yann; Joucken, Frédéric; Sharma, Dimpy; Rousset, Sylvie; Henrard, Luc; Amara, Hakim; Ghedjatti, Ahmed; Ducastelle, François.

Dans: ACS nano, Vol 9, Numéro 1, 2015, p. 670-678.

Résultats de recherche: Contribution à un journal/une revueArticle

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T1 - Electronic interaction between nitrogen atoms in doped graphene

AU - Tison, Yann

AU - Lagoute, Jérôme

AU - Repain, Vincent

AU - Chacon, Cyril

AU - Girard, Yann

AU - Joucken, Frédéric

AU - Sharma, Dimpy

AU - Rousset, Sylvie

AU - Henrard, Luc

AU - Amara, Hakim

AU - Ghedjatti, Ahmed

AU - Ducastelle, François

PY - 2015

Y1 - 2015

N2 - Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

AB - Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

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KW - STM

KW - STS

KW - tight-binding

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JF - ACS nano

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Tison Y, Lagoute J, Repain V, Chacon C, Girard Y, Joucken F et al. Electronic interaction between nitrogen atoms in doped graphene. ACS nano. 2015;9(1):670-678. https://doi.org/10.1021/nn506074u