Résumé
The interface formation between Sb(111) single crystals and evaporated indium has been studied with various spectroscopic techniques. It is shown from an Auger intensity analysis that a layer-growth of InSb is obtained at 550 K. LEED is used to determine the overlayer atomic geometry. The InSb layer is ordered and a lattice parameter close to the value for InSb(111) is obtained. The InSb formation is confirmed by the chemical shift of the Sb 4d and In 4d core lines with XPS.
langue originale | Anglais |
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Pages (de - à) | 370-373 |
Nombre de pages | 4 |
journal | Fresenius' Zeitschrift für Analytische Chemie |
Volume | 329 |
Numéro de publication | 2-3 |
Les DOIs | |
Etat de la publication | Publié - 1 janv. 1987 |