Résumé
Herein, we report for the first time on the facile synthesis of 2D layered WS 2 nanosheets assembled on 1D WS 2 nanostructures by combining the aerosol assisted chemical vapor deposition (AA-CVD) method with H 2-free atmospheric pressure CVD, for an ultrasensitive detection of NO 2. This synthesis strategy allows us a direct integration of the sensing material onto the sensor transducer with high growth yield and uniform coverage. Two different WS 2 morphologies (nanotriangles and nanoflakes) were prepared and investigated. The results show that the assembly of layered WS 2 nanosheets on a 3D architecture leads to an improvement in sensing performance by maintaining a high surface area in an accessible porous network. The sensors fabricated show stable, reproducible and remarkable responses towards NO 2 at ppb concentration levels. The highest sensitivity was recorded for WS 2 NT sensors, with an unprecedented ultra-low detection limit under 5 ppb. Additionally, this material has demonstrated its ability to detect 800 ppb of NO 2 even when operated at room temperature (25 °C). Regarding humidity cross-sensitivity, our WS 2 sensors remain stable and functional for detecting NO 2 at ppb levels (i.e., a moderate response decrease is observed) when ambient humidity is raised to 50%. An 8-month long-term stability study has been conducted, which indicates that WS 2-NT sensors show a very stable response to NO 2 over time.
langue originale | Anglais |
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Numéro d'article | 128813 |
journal | Sensors and Actuators B: Chemical |
Volume | 326 |
Les DOIs | |
Etat de la publication | Publié - 1 janv. 2021 |
Empreinte digitale
Examiner les sujets de recherche de « CVD growth of self-assembled 2D and 1D WS2 nanomaterials for the ultrasensitive detection of NO2 ». Ensemble, ils forment une empreinte digitale unique.Équipement
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Plateforme technologique Morphologie, imagerieEquipement/installations: Plateforme technolgique
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Plateforme technologique Synthese, irradiation et analyse des materiauxEquipement/installations: Plateforme technolgique