Core excitons and conduction-band structures in orthorhombic GeS, GeSe, SnS, and SnSe single crystals

M. Taniguchi, R. L. Johnson, J. Ghijsen, M. Cardona

    Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

    Résumé

    Photoelectron partial-yield and constant-initial-state (CIS) spectra of the layered-semiconductor GeS, GeSe, SnS0.9Se0.1, and SnSe single crystals were investigated with use of synchrotron radiation. The cation d core (Ge 3d and Sn 4d) yield spectra show intense and sharp doublets due to cation-derived core excitons. The CIS spectra exhibit strong resonance due to an interference between the direct-recombination process of the core excitons and the direct-excitation process of the valence electrons. The strong resonance is characteristic of core excitons with a long lifetime and a fairly localized nature. The anion p and d core (S 2p and Se 3d) yield spectra are much broader than the cation d core spectra and reflect the density of states (DOS) of the conduction bands. Energies of the experimental DOS peaks compare favorably with conduction-band features derived from interband optical-absorption spectra.

    langue originaleAnglais
    Pages (de - à)3634-3643
    Nombre de pages10
    journalPhysical Review B
    Volume42
    Numéro de publication6
    Les DOIs
    Etat de la publicationPublié - 1 déc. 1990

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