Cooling effects of field emission from thermoelectric materials

M. S. Chung, K. P. Geum, A. Mayer, B. L. Weiss, N. M. Miskovsky, P. H. Cutler

Résultats de recherche: Contribution dans un livre/un catalogue/un rapport/dans les actes d'une conférenceArticle dans les actes d'une conférence/un colloque

Résumé

It is known that the energy exchange takes place between the cathode and the external circuit in field emission. The resultant, so-called Nottingham effect, for a metallic cathode contributes to heating at low temperatures and to cooling at high temperatures with reference of 1000K. This stabilizing two-way effect changes to be one-way for semiconductor cathodes. Recently we have theoretically found that field emission from the n-type semiconductor yields the cooling in the cathode at all temperatures. Even though the Joule heating is taken into account, the net cooling is made in the considerable range of current [1]. The energy exchange obtained for field emission from n-type Si and GaN is found to be a few fractions of eV.

langue originaleAnglais
titreProceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010
Pages295-296
Nombre de pages2
Les DOIs
Etat de la publicationPublié - 1 déc. 2010
Evénement8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010 - Nanjing, Chine
Durée: 14 oct. 201016 oct. 2010

Série de publications

NomProceedings - 2010 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 and NANOcarbon 2010

Une conférence

Une conférence8th International Vacuum Electron Sources Conference, IVESC 2010 and NANOcarbon 2010
Pays/TerritoireChine
La villeNanjing
période14/10/1016/10/10

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