Conduction band intersubband transitions in Ge/SiGe quantum wells

M. De Seta, G. Capellini, Y. Busby, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, A. Nucara, S. Lupi

Résultats de recherche: Contribution à un journal/une revueArticleRevue par des pairs

Résumé

In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.

langue originaleAnglais
Numéro d'article051918
journalApplied Physics Letters
Volume95
Numéro de publication5
Les DOIs
Etat de la publicationPublié - 2009
Modification externeOui

Empreinte digitale

Examiner les sujets de recherche de « Conduction band intersubband transitions in Ge/SiGe quantum wells ». Ensemble, ils forment une empreinte digitale unique.

Contient cette citation